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參數(shù)資料
| 型號： | SMBJ350A |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 139K |
| 代理商： | SMBJ350A |
25
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
SMBJ Series
Surface Mount – 600W > SMBJ series
Please refer to http://www.Littelfuse.com/series/SMBJ.html for current information.
SMBJ
S
eries
Ratings and Characteristic Curves (T
A=25°C unless otherwise noted)
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
t
d-Pulse Width (sec.)
0.2x0.2" (5.0x5.0mm)
Copper Pad Area
P
PPM
-Peak
Pulse
Power
(kW)
I PPM
-P
eak
P
ulse
Cur
rent,
%
I
RSM
0
50
100
150
1.0
2.0
3.0
4.0
tr=10μsec
Peak Value
IPPM
2
TJ=25°C
Pulse Width(td) is dened
as the point where the peak
current decays to 50% of IPPM
10/1000μsec. Waveform
as dened by R.E.A
td
t-Time (ms)
Half Value
IPPM
( )
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage
%
T
A - Ambient Temperature (C)
1
10
100
1000
10000
1.0
10.0
100.0
1000.0
C
j(
pF)
Tj=25C
f=1.0MHz
Vsig=50mVp-p
Uni-directional V=0V
Bi-directional V=0V
V
BR - Reverse Breakdown Voltage (V)
Uni-directional @V
R
Bi-directional @V
R
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
P
M(A
V)
,Steady
State
Power
Dissipation
(W)
T
A - Ambient Temperature (C)
Figure 1 - Peak Pulse Power Rating
Figure 2 - Pulse Derating Curve
Figure 3 - Pulse Waveform
Figure 4 - Typical Junction Capacitance
Figure 5 - Steady State Power Dissipation Derating Curve
0
20
40
60
80
100
120
1
10
100
Number of Cycles at 60 Hz
I FSM
-
Peak
Forward
Surge
Current
(A)
Figure 6 - Maximum Non-Repetitive Peak Forward
Surge Current Uni-Directional Only
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ350A-13-F | 功能描述:MOSFET Transient Voltage Su SMB T&R 3K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SMBJ350AE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 350V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 350V 5% UNIDIR SMBJ |
| SMBJ350C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 350Vr 600W 1.1A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ350CA | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 350Vr 600W 1.1A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ350CA | 制造商:Littelfuse 功能描述:TVS DIODE 600W 350V DO-214AA |
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