參數(shù)資料
型號(hào)： SMBJ36ATR
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 98K
代理商： SMBJ36ATR
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Document Number: 88392
Revision: 04-Sep-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Notes:
(1) Pulse test: tp
≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum VBR is 7.25 V
(6) VF = 3.5 V at IF = 50 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(+)SMBJ43
MS
CS
47.8
58.4
1.0
43
1.0
7.8
76.7
(+)SMBJ43A
MT
CT
47.8
52.8
1.0
43
1.0
8.6
69.4
(+)SMBJ45
MU
50.0
61.1
1.0
45
1.0
7.5
80.3
(+)SMBJ45A
MV
50.0
55.3
1.0
45
1.0
8.3
72.7
(+)SMBJ48
MW
53.3
65.1
1.0
48
1.0
7.0
85.5
(+)SMBJ48A
MX
53.3
58.9
1.0
48
1.0
7.8
77.4
(+)SMBJ51
MY
56.7
69.3
1.0
51
1.0
6.6
91.1
(+)SMBJ51A
MZ
56.7
62.7
1.0
51
1.0
7.3
82.4
(+)SMBJ54
ND
60.0
73.3
1.0
54
1.0
6.2
96.3
(+)SMBJ54A
NE
60.0
66.3
1.0
54
1.0
6.9
87.1
(+)SMBJ58
NF
64.4
78.7
1.0
58
1.0
5.8
103
(+)SMBJ58A
NG
64.4
71.2
1.0
58
1.0
6.4
93.6
(+)SMBJ60
NH
66.7
81.5
1.0
60
1.0
5.6
107
(+)SMBJ60A
NK
66.7
73.7
1.0
60
1.0
6.2
96.8
(+)SMBJ64
NL
71.1
86.9
1.0
64
1.0
5.3
114
(+)SMBJ64A
NM
71.1
78.6
1.0
64
1.0
5.8
103
(+)SMBJ70
NN
77.8
95.1
1.0
70
1.0
4.8
125
(+)SMBJ70A
NP
77.8
86.0
1.0
70
1.0
5.3
113
(+)SMBJ75
NQ
83.3
102
1.0
75
1.0
4.5
134
(+)SMBJ75A
NR
83.3
92.1
1.0
75
1.0
5.0
121
(+)SMBJ78
NS
86.7
106
1.0
78
1.0
4.3
139
(+)SMBJ78A
NT
86.7
95.8
1.0
78
1.0
4.8
126
(+)SMBJ85
NU
94.4
115
1.0
85
1.0
4.0
151
(+)SMBJ85A
NV
94.4
104
1.0
85
1.0
4.4
137
(+)SMBJ90
NW
100
122
1.0
90
1.0
3.8
160
(+)SMBJ90A
NX
100
111
1.0
90
1.0
4.1
146
(+)SMBJ100
NY
111
136
1.0
100
1.0
3.4
179
(+)SMBJ100A
NZ
111
123
1.0
100
1.0
3.7
162
(+)SMBJ110
PD
122
149
1.0
110
1.0
3.1
196
(+)SMBJ110A
PE
122
135
1.0
110
1.0
3.4
177
(+)SMBJ120
PF
133
163
1.0
120
1.0
2.8
214
(+)SMBJ120A
PG
133
147
1.0
120
1.0
3.1
193
(+)SMBJ130
PH
144
176
1.0
130
1.0
2.6
231
(+)SMBJ130A
PK
144
159
1.0
130
1.0
2.9
209
(+)SMBJ150
PL
167
204
1.0
150
1.0
2.2
268
(+)SMBJ150A
PM
167
185
1.0
150
1.0
2.5
243
(+)SMBJ160
PN
178
218
1.0
160
1.0
2.1
287
(+)SMBJ160A
PP
178
197
1.0
160
1.0
2.3
259
(+)SMBJ170
PQ
189
231
1.0
170
1.0
2.0
304
(+)SMBJ170A
PR
189
209
1.0
170
1.0
2.2
275
SMBJ188
PT
209
255
1.0
188
1.0
1.7
344
SMBJ188A
PS
209
231
1.0
188
1.0
2.0
328
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT
(1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (A)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI
BI
MIN.
MAX.
相關(guān)PDF資料
PDF描述
SMBT2222E6433 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SMBT3904E6327 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SMBT4124E6327 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SMBT4124E6327 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SMBT5086E6327 50 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMBJ36A-TR 制造商:STMicroelectronics 功能描述:
SMBJ36C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 36Vr 600W 10.4A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ36C/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ36C/2 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ36C/2B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*