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參數資料
| 型號： | SMBJ36CA-HE3/52 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | SMBJ36CA-HE3/52 |
www.vishay.com
4
Document Number 88392
08-Sep-06
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
100
°C/W
Typical thermal resistance, junction to lead
RθJL
20
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ5.0A-E3/52
0.096
52
750
7" Diameter Plastic Tape & Reel
SMBJ5.0A-E3/5B
0.096
5B
3200
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction Temperature
0.1
1
10
100
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
6000
10
1
100
200
Uni-Directional
Bi-Directional
C
J,
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at Stand-off
Voltage VWM
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ36CA-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ40A-HE3/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ40C-HE3/52 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ40C-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ40CA-HE3/5B | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ36CA-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,36V 5%,BIDIR,SMB TVS |
| SMBJ36CA-M3/5B | 制造商:Vishay Semiconductors 功能描述:600W,36V 5%,BIDIR,SMB TVS |
| SMBJ36CA-TP | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 36V 600 Watts RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ36CATR | 功能描述:TVS DIODE 36VWM 58.1VC SMB 制造商:smc diode solutions 系列:SMBJ 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:齊納 單向通道:- 雙向通道:1 電壓 - 反向關態(tài)（典型值）:36V 電壓 - 擊穿（最小值）:40V 電壓 - 箝位（最大值）@ Ipp:58.1V 電流 - 峰值脈沖（10/1000μs）:10.3A 功率 - 峰值脈沖:600W 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應商器件封裝:SMB（DO-214AA） 標準包裝:1 |
| SMBJ36CA-TR | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 TRANSIL RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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