- 您現在的位置：買賣IC網 > PDF目錄31231 > SMBJ90A (BOURNS INC) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF資料下載
參數資料
| 型號： | SMBJ90A |
| 廠商： | BOURNS INC |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數： | 4/5頁 |
| 文件大?。?/td> | 354K |
| 代理商： | SMBJ90A |
Specications are subject to change without notice.
Customers should verify actual device performance in their specic applications.
SMBJ Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve
Maximum Non-Repetitive Surge Current
Pulse Waveform
Typical Junction Capacitance
Pulse Rating Curve
Steady State Power Derating Curve
100
75
50
25
0
050
25
75
100
150
125
175
200
Ambient Temperature (
Peak
Pulse
Derating
in
Percent
of
Peak
Power
or
Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
Peak
Forward
Surge
Current
(Amps)
120
80
100
60
40
20
0
1
2
5
10
20
50
100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
100
50
0
1.0
2.0
3.0
T, Time (ms)
I P
,Peak
Pulse
Current
(%)
TA=25 °C
TP
TR=10 s
Half value=
IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Capacitance
(pF)
10000
100
0
10
100
1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
100
10
1.0
0.1
0.1 s
1.0 s
10 s
10 ms
TP, Pulse Width
P
,Peak
Power
(KW)
100 s
1.0 ms
TA = 25 °C
Non-repetitive
Pulse Waveform
Shown in Pulse Waveform Graph
5.0 mm Lead Areas
5.0
3.0
4.0
2.0
1.0
0.0
050
25
75
100
150
125
175
200
TL, Lead Temperature (°C)
RM(AV)
Steady
State
Power
Dissipation
(W)
60 Hz Resistive or
Inductive Load
相關PDF資料 |
PDF描述 |
|---|---|
| SMBJ16A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ10CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ51A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ64A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ15CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMBJ90A R4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 90V 600W 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ90A | 制造商:Fairchild Semiconductor Corporation 功能描述:TVS DIODE 600W 90V DO-214AA |
| SMBJ90A/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 90V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ90A/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 90V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ90A/2B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 90V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。