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參數(shù)資料
| 型號(hào)： | SMBTA92M |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP Silicon High-Voltage Transistor |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 27K |
| 代理商： | SMBTA92M |
SMBTA 92M
Semiconductor Group
Mar-13-1998
2
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 100 μA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 μA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
Collector-base cutoff current
V
CB
= 200 V,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
(BR)CEO
300
-
-
V
V
(BR)CBO
300
-
-
V
(BR)EBO
5
-
-
I
CBO
-
-
250
nA
I
CBO
-
-
20
μA
I
EBO
-
-
100
nA
h
FE
25
40
25
-
-
-
-
-
-
-
V
CEsat
-
-
0.5
V
V
BEsat
-
-
0.9
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 20 V, f= 100 MHz
Collector-base capacitance
V
CB
= 20 V, f= 1 MHz
f
T
50
-
-
MHz
C
cb
-
-
6
pF
1) Pulse test: t < 300
μ
s; D < 2%
2
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