參數(shù)資料
型號: SMBZ5924B-E3/5B
廠商: VISHAY SEMICONDUCTORS
元件分類: 齊納二極管
英文描述: 9.1 V, 0.55 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 88K
代理商: SMBZ5924B-E3/5B
New Product
SMBZ5919B thru SMBZ5945B
Vishay General Semiconductor
Document Number: 88485
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Power Voltage-Regulating Diodes
FEATURES
Low profile package
Ideal for automated placement
Low Zener impedance
Low regulation factor
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
general
purpose
regulation
and
protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
VZ
5.6 V to 68 V
PD
3.0 W at TL = 75 °C
PD
550 mW at TA = 25 °C
TJ max.
150 °C
DO-214AA (SMBJ)
Notes:
(1) Mounted on minimum recommended pad layout
(2) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum steady state power dissipation at TL = 75 °C (Fig. 1)
PD
3.0
W
Maximum steady state power dissipation at TA = 25 °C (Fig. 1)
(1)
PD
550
mW
Maximum instantaneous forward voltage at 200 mA for all types (2)
VF
1.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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