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參數(shù)資料
| 型號(hào)： | SMC9.1C |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 50K |
| 代理商： | SMC9.1C |
SMC SERIES
SMC
All Dimensions in millimeter
SMC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
6.60
7.11
6.22
5.59
2.92
3.18
0.31
0.15
7.75
8.13
0.05
0.20
2.01
2.62
0.76
1.52
C
H
E
F
G
D
B
A
FEATURES
Rating to 200V VBR
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ps for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.007 ounces, 0.21 gram
TJ
Operating Temperature Range
-55 to +150
TSTG
Storage Temperature Range
-55 to +175
C
IFSM
Peak Forward Surge Current 8.3ms
single half sine-wave super imposed
on rated load (Note 3)
200
AMPS.
UNIT
PM(AV)
5.0
WATTS
Steady State Power Dissipation at TL =75 C
PPK
WATTS
PEAK POWER DISSIPATION AT TA = 25 C,
TP = 1ms (Note 1,2)
SYMBOLS
VALUE
Minimum 1500
C
CHARACTERISTICS
(JEDEC METHOD)
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
STAND-OFF VOLTAGE - 6.8 to 200 Volts
POWER DISSIPATION - 1500 WATTS
Maximum Instantaneous forward voltage
at 100A for unidirectional devices only (Note 3)
VF
Volts
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above TA= 25 C per fig.1.
2. Thermal Resistance junction to Lead
3. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
4. VF= 3.5V on SMC6.8 thru SMC90A devices and VF= 5.0V on SMC100 thru SMC200A devices.
SEE NOTE 4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KSIC01
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