參數資料
型號： SMCG110/51
廠商： GENERAL SEMICONDUCTOR INC
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
文件頁數： 1/4頁
文件大小： 75K
代理商： SMCG110/51
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.245 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
Cathode Band
SMCJ5.0 thru 188CA
Surface Mount TRANSZORB
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 1500W
Dimensions in inches
and (millimeters)
10/17/01
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
1500W peak pulse power capability with a 10/1000
s
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Contact local sales office for gull-wing lead
(SMCG prefix) form (DO-215AB)
Mechanical Data
Case: JEDEC DO-214AB molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.007oz., 0.21g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
57 – 850 per 7” plastic Reel (16mm tape), 8.5K/carton
9A – 3.5K per 13” plastic Reel (16mm tape), 35K/carton
0.185 MAX.
(4.69 MAX.)
0.121 MIN.
(3.07 MIN.)
0.060 MIN.
(1.52 MIN.)
0.320 REF
Mounting Pad Layout
Extended
Voltage
Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 1500
W
a 10/1000
s waveform(1)(2)
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Next Table
A
Peak forward surge current 8.3ms single half sine-wave (2)
IFSM
200
A
uni-directional only
Typical thermal resistance, junction to ambient (3)
R
θJA
75
°C/W
Typical thermal resistance, junction to lead
R
θJL
15
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
DO-214AB (SMC J-Bend)
相關PDF資料
PDF描述
SMCG110C/9A 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG11A/51 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG11A/9A 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG11C/57 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMCG11CA/57 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
相關代理商/技術參數
參數描述
SMCG110A 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT
SMCG110A/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG110A/9AT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG110A-E3/51T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG110A-E3/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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