參數(shù)資料
型號： SMCG33A-E3/9AT
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
封裝： ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 92K
代理商： SMCG33A-E3/9AT
SMCG5.0 thru SMCG188CA
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88457
Revision: 22-Oct-08
4
Note:
(1) Measured on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
75
°C/W
Typical thermal resistance, junction to lead
RθJL
15
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMCG5.0A-E3/57T
0.211
57T
850
7" diameter plastic tape and reel
SMCG5.0A-E3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
SMCG5.0AHE3/57T (1)
0.211
57T
850
7" diameter plastic tape and reel
SMCG5.0AHE3/9AT (1)
0.211
9AT
3500
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance Uni-Directional
0
50
100
150
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 s Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
20 000
10
1
100
400
Uni-Directional
Bi-Directional
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
V
R, Measured at
Stand-Off
Voltage V
WM
相關PDF資料
PDF描述
SMCG36A-E3/9AT 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
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SMCG43-E3/57T 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
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相關代理商/技術參數(shù)
參數(shù)描述
SMCG33AHE3/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG33AHE3/59T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG33AHE3/9AT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG33AHE3/9CT 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCG33A-M3/57T 制造商:Vishay Semiconductors 功能描述:1.5KW,33V 5%,UNIDIR,SMC TVS
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