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    參數(shù)資料
    型號: SMCG43C-E3
    廠商: VISHAY SEMICONDUCTORS
    元件分類: TVS二極管 - 瞬態(tài)電壓抑制
    英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    封裝: PLASTIC, SMCG, 2 PIN
    文件頁數(shù): 1/5頁
    文件大小: 69K
    代理商: SMCG43C-E3
    SMCG5.0 thru 188CA
    Vishay Semiconductors
    formerly General Semiconductor
    Document Number 88457
    www.vishay.com
    24-Jul-03
    1
    Surface Mount TRANSZORB
    Transient Voltage Suppressors
    Stand-off Voltage 5.0 to 188V
    Peak Pulse Power 1500W
    Features
    Underwriters Laboratory Recognition under UL standard
    for safety 497B: Isolated Loop Circuit Protection
    Low profile package with built-in strain relief for
    surface mounted applications
    Glass passivated junction
    Low incremental surge resistance, excellent clamping
    capability
    1500W peak pulse power capability with a 10/1000
    s
    waveform, repetition rate (duty cycle): 0.01%
    Very fast response time
    High temperature soldering guaranteed:
    250°C/10 seconds at terminals
    Mechanical Data
    Case: JEDEC DO-215AB molded plastic over
    passivated junction
    Terminals: Solder plated, solderable per
    MIL-STD-750, Method 2026
    Polarity: For unidirectional types the band denotes the
    cathode, which is positive with respect to the anode
    under normal TVS operation
    Weight: 0.007 oz., 0.21 g
    Flammability: Epoxy is rated UL 94V-0
    Packaging Codes – Options (Antistatic):
    51 – 1K per Bulk box, 10K/carton
    57 – 850 per 7" plastic Reel (16mm tape), 8.5K/carton
    9A – 3.5K per 13" plastic Reel (16mm tape), 35K/carton
    Devices for Bidirectional Applications
    For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.
    Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
    Parameter
    Symbol
    Value
    Unit
    Peak pulse power dissipation with
    PPPM
    Minimum 1500
    W
    a 10/1000
    s waveform(1)(2)
    Peak pulse current with a 10/1000
    s waveform(1)
    IPPM
    See Next Table
    A
    Peak forward surge current 8.3ms single half sine-wave (2)
    IFSM
    200
    A
    uni-directional only
    Typical thermal resistance, junction to ambient (3)
    R
    θJA
    75
    °C/W
    Typical thermal resistance, junction to lead
    R
    θJL
    15
    °C/W
    Operating junction and storage temperature range
    TJ, TSTG
    –55 to +150
    °C
    Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
    (2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
    (3) Mounted on minimum recommended pad layout
    Extended
    Voltage
    Range
    0.280 (7.11)
    0.260 (6.60)
    0.016 (0.41)
    0.006 (0.15)
    0.020
    (0.51) Max.
    0.058 (1.47)
    0.038 (0.97)
    0.400 (10.16)
    0.380 (9.64)
    0.040 (1.02)
    0.024 (0.61)
    0.008 (0.20)
    0.004 (0.10)
    SEATING
    PLANE
    0.245 (6.22)
    0.220 (5.59)
    0.125 (3.17)
    0.115 (2.92)
    0.095 (2.41)
    0.075 (1.90)
    Cathode Band
    DO-215AB (SMCG)
    0.050 (1.27)
    0.125 (3.17)
    0.310 (7.87)
    Mounting Pad Layout DO-215AB
    Dimensions in inches
    and (millimeters)
    相關(guān)PDF資料
    PDF描述
    SMCG45/51-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG48CA/51-E3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG5.0/51-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG5.0C/51-E3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
    SMCG51CA/51-E3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
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