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參數(shù)資料
| 型號(hào)： | SMCG5654E3/TR13 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 170K |
| 代理商： | SMCG5654E3/TR13 |
TRANSIENT VOLTAGE SUPPRESSORS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCG5629 thru SMCG5665A, e3
and SMCJ5629 thru SMCJ5665A, e3
SMCG/J5
629
thru
SMCG/J5
665
A
OUTLINE AND CIRCUIT
Measured at
Stand-off Voltage
Measured at
zero voltage
Peak
Pulse
Power
(P
PP
)in
KW
C:
Ca
p
acita
n
c
e
in
p
ic
o
farads
Exponential wave-
form (See FIG. 2)
Square-wave pulse
Pulse Time (tp)
FIGURE 1 Non-repetitive peak pulse power rating curve.
Note: Peak power defined as peak voltage times peak current.
BV: Breakdown Voltage in Volts
FIGURE 5 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
Microsemi
Scottsdale Division
Page 3
Copyright
2007
6-21-2007 REV D
,e3
FIGURE 2
Pulse wave form for exponential surge
FIGURE 3 Derating curve
Peak
pul
se
pow
er
(P
PP
)or
cur
rent
I
PP
(
s
ur
ge)
in
per
ce
nt
o
f2
5
o C
ra
ting
P
u
lse
cu
rren
t(I
P
)in
p
e
rce
n
tof
I
PP
Stea
dy-
s
tat
e
p
o
w
e
r
dissipatio
n
(
w
atts)
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of I
(surge).
TL – Lead Temperature
oC
FIGURE 4
Steady-state power
derating curve
Time (t) in milliseconds
TA Ambient Temperature
oC
PACKAGE DIMENSIONS
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115
.260
.220
.305
.077
.380
.025
.30
MAX
.121
.280
.245
.320
.104
.400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92
6.60
5.59
7.75
1.95
9.65
0.635
0.760
MAX
3.07
7.11
6.22
8.13
2.65
10.16
1.016
1.520
DO-214AB
DO-215AB
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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PDF描述 |
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| SMCG5654A/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5653A/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5652/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5651/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5659E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMCG5655 | 制造商:Microsemi Corporation 功能描述:TVS SGL 66.4V 1.5KW 2PIN DO-215AB - Bulk |
| SMCG5655/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 73.8V, VBRMAX = 90.2V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 66.4VWM 118VC DO215AB |
| SMCG5655A | 制造商:Microsemi Corporation 功能描述:TVS SGL 70.1V 1.5KW 2PIN DO-215AB - Bulk |
| SMCG5655A/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 77.9V, VBRMAX = 86.1V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 70.1VWM 113VC DO215AB |
| SMCG5655AE3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 77.9V, VBRMAX = 86.1V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 70.1VWM 113VC DO215AB |
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