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參數(shù)資料
| 型號： | SMCJ10C-W |
| 廠商： | RECTRON LTD |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 672K |
| 代理商： | SMCJ10C-W |
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 1500 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
TVS
TFMCJ
SERIES
DO-214AB
1500 WATT PEAK POWER 6.5 WATTS STEADY STATE
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMCJ5.0 thru TFMCJ170
Electrical characteristics apply in both direction
2009-1
REV:B
3. Lead temperature at TL = 25oC
NOTES :
2. Mounted on 0.31 X 0.31”( 8.0 X 8.0mm) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25oC per Fig.2.
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. VF = 3.5V on TFMCJ-5.0 thru TFMCJ-90 devices and VF = 5.0V on TFMCJ-100 thru TFMCJ-170 devices.
RATINGS
Steady State Power Dissipation at TL = 75oC (Note 2)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 100A for unidirectional
only
SYMBOL
IFSM
VF
TJ, TSTG
Volts
-55 to + 150
0
C
UNITS
Amps
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Minimum 1500
200
SEE NOTE 5
VALUE
Operating and Storage Temperature Range
PPPM
Watts
IPPM
Amps
SEE TABLE 1
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 3,4)
unidirectional only
PM(AV)
6.5
Watts
0.006 (0.152)
0.012 (0.305)
0.008 (0.203)
0.004 (0.102)
0.320 (8.13)
0.305 (7.75)
0.030 (0.76)
0.060 (1.52)
0.079 (2.06)
0.103 (2.62)
0.260 (6.60)
0.280 (7.11)
0.220 (5.59)
0.245 (6.22)
0.125 (3.17)
0.115 (2.92)
R q J A
R q J L
6”Fully ROHS compliant”,”100% Sn plating(Pb-free).
75
15
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Leads
0
C/W
0
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
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| SMCJ10-E3/1T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1.5KW 10V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10-E3/51T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10-E3/57T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10-E3/59T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10-E3/9AT | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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