參數(shù)資料
型號： SMCJ11-HE3/9AT
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝： ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 106K
代理商： SMCJ11-HE3/9AT
www.vishay.com
2
Document Number 88394
26-Feb-07
Vishay General Semiconductor
SMCJ5.0 thru SMCJ188CA
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
V(BR) AT IT
(1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (A)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI
BI
MIN
MAX
(+)SMCJ5.0
GDD
6.40
7.82
10.0
5.0
1000
156.3
9.6
(+)SMCJ5.0A(5)
GDE
6.40
7.07
10.0
5.0
1000
163.0
9.2
(+)SMCJ6.0
GDF
6.67
8.15
10.0
6.0
1000
131.6
11.4
(+)SMCJ6.0A
GDG
6.67
7.37
10.0
6.0
1000
145.6
10.3
(+)SMCJ6.5
GDH
BDH
7.22
8.82
10.0
6.5
500
122.0
12.3
(+)SMCJ6.5A
GDK
BDK
7.22
7.98
10.0
6.5
500
133.9
11.2
(+)SMCJ7.0
GDL
7.78
9.51
10.0
7.0
200
112.8
13.3
(+)SMCJ7.0A
GDM
7.78
8.60
10.0
7.0
200
125.0
12.0
(+)SMCJ7.5
GDN
BDN
8.33
10.2
1.0
7.5
100
104.9
14.3
(+)SMCJ7.5A
GDP
BDP
8.33
9.21
1.0
7.5
100
116.3
12.9
(+)SMCJ8.0
GDQ
BDG
8.89
10.9
1.0
8.0
50
100.0
15.0
(+)SMCJ8.0A
GDR
BDR
8.89
9.83
1.0
8.0
50
110.3
13.6
(+)SMCJ8.5
GDS
BDS
9.44
11.5
1.0
8.5
20
94.3
15.9
(+)SMCJ8.5A
GDT
BDT
9.44
10.4
1.0
8.5
20
104.2
14.4
(+)SMCJ9.0
GDU
BDU
10.0
12.2
1.0
9.0
10
88.8
16.9
(+)SMCJ9.0A
GDV
BDV
10.0
11.1
1.0
9.0
10
97.4
15.4
(+)SMCJ10
GDW
BDW
11.1
13.6
1.0
10
5.0
79.8
18.8
(+)SMCJ10A
GDX
BDX
11.1
12.3
1.0
10
5.0
88.2
17.0
(+)SMCJ11
GDY
12.2
14.9
1.0
11
5.0
74.6
20.1
(+)SMCJ11A
GDZ
12.2
13.5
1.0
11
5.0
82.4
18.2
(+)SMCJ12
GED
BED
13.3
16.3
1.0
12
5.0
68.2
22.0
(+)SMCJ12A
GEE
BEE
13.3
14.7
1.0
12
5.0
75.4
19.9
(+)SMCJ13
GEF
14.4
17.6
1.0
13
1.0
63.0
23.8
(+)SMCJ13A
GEG
14.4
15.9
1.0
13
1.0
69.8
21.5
(+)SMCJ14
GEH
BEH
15.6
19.1
1.0
14
1.0
58.1
25.8
(+)SMCJ14A
GEK
BEK
15.6
17.2
1.0
14
1.0
64.7
23.2
(+)SMCJ15
GEL
BEL
16.7
20.4
1.0
15
1.0
55.8
26.9
(+)SMCJ15A
GEM
BEM
16.7
18.5
1.0
15
1.0
61.5
24.4
(+)SMCJ16
GEN
17.8
21.8
1.0
16
1.0
52.1
28.8
(+)SMCJ16A
GEP
17.8
19.7
1.0
16
1.0
57.7
26.0
(+)SMCJ17
GEQ
18.9
23.1
1.0
17
1.0
49.2
30.5
(+)SMCJ17A
GER
18.9
20.9
1.0
17
1.0
54.3
27.6
(+)SMCJ18
GES
BES
20.0
24.4
1.0
18
1.0
46.6
32.2
(+)SMCJ18A
GET
BET
20.0
22.1
1.0
18
1.0
51.4
29.2
(+)SMCJ20
GEU
BEU
22.2
27.1
1.0
20
1.0
41.9
35.8
(+)SMCJ20A
GEV
BEV
22.2
24.5
1.0
20
1.0
46.3
32.4
(+)SMCJ22
GEW
BEW
24.4
29.8
1.0
22
1.0
38.1
39.4
(+)SMCJ22A
GEX
BEX
24.4
26.9
1.0
22
1.0
42.3
35.5
(+)SMCJ24
GEY
BEY
26.7
32.6
1.0
24
1.0
34.9
43.0
(+)SMCJ24A
GEZ
BEZ
26.7
29.5
1.0
24
1.0
38.6
38.9
(+)SMCJ26
GFD
BFD
28.9
35.3
1.0
26
1.0
32.2
46.6
(+)SMCJ26A
GFE
BFE
28.9
31.9
1.0
26
1.0
35.6
42.1
(+)SMCJ28
GFF
BFF
31.1
38.0
1.0
28
1.0
30.0
50.0
(+)SMCJ28A
GFG
BFG
31.1
34.4
1.0
28
1.0
33.0
45.4
(+)SMCJ30
GFH
BFH
33.3
40.7
1.0
30
1.0
28.0
53.5
(+)SMCJ30A
GFK
BFK
33.3
36.8
1.0
30
1.0
31.0
48.4
(+)SMCJ33
GFL
BFL
36.7
44.9
1.0
33
1.0
25.4
59.0
(+)SMCJ33A
GFM
BFM
36.7
40.6
1.0
33
1.0
28.1
53.3
(+)SMCJ36
GFN
BFN
40.0
48.9
1.0
36
1.0
23.3
64.3
(+)SMCJ36A
GFP
BFP
40.0
44.2
1.0
36
1.0
25.8
58.1
(+)SMCJ40
GFQ
BFQ
44.4
54.3
1.0
40
1.0
21.0
71.4
(+)SMCJ40A
GFR
BFR
44.4
49.1
1.0
40
1.0
23.3
64.5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMCJ12 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12Vr 1500W 75.4A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMCJ12(C) 制造商:BYTES 制造商全稱:Bytes 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMCJ12(C)A 制造商:BYTES 制造商全稱:Bytes 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMCJ12/57T 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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