參數(shù)資料
型號(hào)： SMCJ6068A
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類(lèi)： 參考電壓二極管
英文描述： CMOS Triple 3-Input NAND Gate 14-SOIC -55 to 125
中文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝： PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 257K
代理商： SMCJ6068A
MSC1364.PDF 01/06/00
SMCG/J6036
thru
SMCG/J6072A
FEATURES:
BIDIRECTIONAL
1500 WATTS PEAK POWER
VOLTAGE RANGE FROM 5.5V TO 185V
LOW INDUCTANCE
LOW PROFILE PACKAGE FOR SURFACE MOUNTING
DESCRIPTION:
These Transient Voltage Suppressor devices are a series of Bi-directional Silicon
Transient Suppressors used in AC applications where large voltage transients can
permanently damage voltage-sensitive components.
These devices are manufactured using two silicon PN, junctions in a back to back
configuration. They are characterized by their high surge capability, fast response
time, and low impedance, (R
on
) for clamping surge.
The SMC series, rated for 1500 watts during a one millisecond pulse, can be used to
protect sensitive circuits against transients induced by lighting and inductive load
switching. The response time of TAZ clamping action is less than (5x10
-9
) sec;
therefore, they can protect Integrated Circuits, MOS devices, Hybrids, and other
voltage-sensitive semiconductors and components. This series of devices has also
been proven very effective as EMP and ESD suppressors.
MAXIMUM RATINGS:
1500 watts of peak pulse power dissipation at 25
°
C
t
clamping
(0 volts to V
(BR)
min): less than 5 x 10
-9
seconds
Operating and Storage Temperature: -65
°
to +150
°
C
Steady state power dissipation: 5.0 watts at T
L
= 25
°
C, at mounting plane.
Repetition rate (duty cycle): .01%
8700 E. Thomas Road
Scotsdale, AZ 85252
Phone: (480) 941-6300
Fax: (480) 947-1503
5.5 thru 185 Volts
1500 Watts
Transient Voltage
Suppressors
Mechanical
Characteristics
CASE: Molded, Surface
Mountable.
TERMINALS: Gull-wing or C-Bend
(modified J-bend) leads, tin lead
plated
POLARITY: No markings on
bi-directional devices.
PACKAGING: 16mm tape (See EIA
Std. RS-481.)
THERMAL RESISTANCE: 20
°
C/W
(typical) junction to lead (tab) at
mounting plane.
tp Pulse Time
Figure 1
Peak Pulse Power vs Pulse Time
P
P
k
DO-214AB
DO-215AB
100
10
0.1
1.0
100ns
1μs
10μs
100μs
1ms
10ms
(Wave Form - See
Figure 2)
Non- Repetitive
相關(guān)PDF資料
PDF描述
SMCJ6069 CMOS Triple 3-Input NAND Gate 14-SO -55 to 125
SMCJ6069A CMOS Triple 3-Input NAND Gate 14-SO -55 to 125
SMCJ6070 5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors
SMCJ6070A CMOS Triple 3-Input NAND Gate 14-TSSOP -55 to 125
SMCJ6071 CMOS Triple 3-Input NAND Gate 14-TSSOP -55 to 125
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SMCJ6068E3/TR13 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 137V, ? 10%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 137VWM 258VC SMCJ
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SMCJ6069/TR13 制造商:Microsemi Corporation 功能描述:1500W, STAND-OFF VOLTAGE = 145V, ? 10%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 1500W 145V 10% BIDIR SMCJ
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