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參數(shù)資料
| 型號(hào)： | SMCJLCE28ATR |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CMOS Dual 4-Input NAND Gate 14-PDIP -55 to 125 |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | SMCJLCE28ATR |
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
W
M
.
C
SCOTTSDALE
DIVISION
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
S
L
GRAPHS
P
P
–
Test wave form
parameterxs
tr
= 10
μ
s
tp
= 1000
μ
s
tp – Pulse Time – sec
FIGURE 2
PULSE WAVEFORM
FIGURE 1
PEAK PULSE POWER vs. PULSE TIME
T – Temperature –
o
C
FIGURE 3
DERATING CURVE
P
P
)
P
)
i
o
C
S CHEMAT IC APPLICAT IONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage V
. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or
“SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional
applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The
unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
Microsemi
Scottsdale Division
Page 3
Copyright
2005
6-06-2005 REV D
FIGURE 4
FIGURE 5
FIGURE 6
TVS with internal low
capacitance rectifier diode
Optional Unidirectional Optional Bidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
configuration (two TVS
devices in anti-parallel)
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMCJLCE28E3 | CMOS Dual 4-Input NAND Gate 14-PDIP -55 to 125 |
| SMCJLCE28TR | CMOS Dual 4-Input NAND Gate 14-SOIC -55 to 125 |
| SMCJLCE30 | CMOS Dual 4-Input NAND Gate 14-SOIC -55 to 125 |
| SMCJLCE30A | CMOS Dual 4-Input NAND Gate 14-SOIC -55 to 125 |
| SMCJLCE30AE3 | 1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMCJLCE28E3/TR7 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
| SMCJLCE30 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 30V 1.5KW 2PIN DO-214AB - Bulk |
| SMCJLCE30/TR13 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
| SMCJLCE30A | 制造商:Microsemi Corporation 功能描述:LOW CAPACITANCE TVS DO-214AB SD - Bulk |
| SMCJLCE30A/TR13 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
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