參數(shù)資料
型號(hào): SP1N6624
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 1 A, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 2/4頁
文件大?。?/td> 327K
代理商: SP1N6624
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6620 thru 1N6625
1N6620
thru
1N6625
ELECTRICAL CHARACTERISTICS @ 25oC
MAXIMUM
REVERSE
CURRENT IR @
VRWM
IR
TYPE
NUMBER
MINIMUM
BREAK-
DOWN
VOLTAGE
VR
IR = 50μA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
TA=25
oC T
A=150
oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2A,
100A/
μs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5A
tfr =12ns
V
V @ A
V
μA
ns
A
V
1N6620
220
1.40V @ 1.2A
1.60V @ 2.0A
200
0.5
150
30
45
3.5
12
1N6621
440
1.40V @ 1.2A
1.60V @ 2.0A
400
0.5
150
30
45
3.5
12
1N6622
660
1.40V @ 1.2A
1.60V @ 2.0A
600
0.5
150
30
45
3.5
12
1N6623
880
1.55V @ 1.0A
1.80V @ 1.5A
800
0.5
150
50
60
4.2
18
1N6624
990
1.55V @ 1.0A
1.80V @ 1.5A
900
0.5
150
50
60
4.2
18
1N6625
1100
1.75V @ 1.0A
1.95V @ 1.5A
1000
1.0
200
60
80
5.0
30
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Scottsdale Division
Page 2
Copyright
2008
6-24-2008 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料
PDF描述
SP3004-04XTG UNIDIRECTIONAL, SILICON, TVS DIODE, MO-223
SP3011-06UTG UNIDIRECTIONAL, SILICON, TVS DIODE
SP4462 7.5 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MLL5922B-1 7.5 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
MLL5923C-1 8.2 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SP1NB1A502W016 制造商:HONEYWELL CLAROSTAT 功能描述:SENSOR0CUBE0W/PANDUIT
SP-1NL4 制造商:Horizon Music 功能描述:Stainless Steel Speakon Wall Plate Neutrik Single Gang 4-Pin 制造商:HORIZON MUSIC 功能描述:STAINLESS STEEL SPEAKON WALL PLATE NEUTRIK SINGLE GANG 4PIN
SP1R10J 功能描述:電流傳感電阻器 - SMD SP1 R10 5% LOOSE RoHS:否 制造商:Vishay/Dale 電阻:10 mOhms 功率額定值:1 W 容差:1 % 外殼代碼 - in:2512 外殼代碼 - mm:6432 溫度系數(shù):75 PPM / C 系列:WSL 工作溫度范圍:- 65 C to + 170 C 產(chǎn)品:Power Metal Strip Resistors Low Value
SP1R10JT 功能描述:電流傳感電阻器 - SMD SP1 R10 5% TAPED RoHS:否 制造商:Vishay/Dale 電阻:10 mOhms 功率額定值:1 W 容差:1 % 外殼代碼 - in:2512 外殼代碼 - mm:6432 溫度系數(shù):75 PPM / C 系列:WSL 工作溫度范圍:- 65 C to + 170 C 產(chǎn)品:Power Metal Strip Resistors Low Value
SP1R12J 功能描述:電流傳感電阻器 - SMD SP1 R12 5% LOOSE RoHS:否 制造商:Vishay/Dale 電阻:10 mOhms 功率額定值:1 W 容差:1 % 外殼代碼 - in:2512 外殼代碼 - mm:6432 溫度系數(shù):75 PPM / C 系列:WSL 工作溫度范圍:- 65 C to + 170 C 產(chǎn)品:Power Metal Strip Resistors Low Value