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參數(shù)資料
| 型號(hào)： | SP4422A |
| 英文描述： | High Voltage Output Electroluminescent Lamp Driver(高壓輸出，場(chǎng)致發(fā)光燈驅(qū)動(dòng)器) |
| 中文描述： | 高電壓輸出電致發(fā)光燈驅(qū)動(dòng)器（高壓輸出，場(chǎng)致發(fā)光燈驅(qū)動(dòng)器） |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | SP4422A |
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SP4422ADS/15
SP4422A Electroluminescent Lamp Driver
2
Copyright 2000 Sipex Corporation
This data sheet specifies environmental parameters, final test conditions and limits as well suggested operating conditions.
For applications which require performance beyond the specified conditions and or limits please consult the factory.
Bonding Diagram:
SPECIFICATIONS
(T= 25
°
C; V
DD
= 3.0V; Lamp Capacitance = 17nF with 100
Series resistor; Coil = 5mH (R
S
= 18
); C
OSC
= 100pF unless otherwise noted)
COIL
V
V
EL 1
EL 2
CAP 1
CAP 2
HON
SP4422A
DD
SS
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of the device at
these ratings or any other above those indicated in the operation sections
of the specifications below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect reliability.
V
............................................................................................................7.0V
Input Voltages/Currents
HON (pin1).........................................-0.5V to (V
+0.5V)
COIL (pin3)..............................................................60mA
Lamp Outputs.............................................................................230V
PP
Storage Temperature.................................................-65C to +150C
PAD
EL1
EL2
X
Y
556.5
556.2
179.0
-151.0
COIL
V
SS
-19.5
-568.0
-517.0
-517.0
HON
CAP2
CAP1
V
DD
-549.0
-549.0
-568.0
-256.5
93.5
-516.5
NOTES:
1. Dimensions are in Microns unless otherwise noted.
2. Bonding pads are 125x125 typical
3. Outside dimensions are maximum, including scribe area.
4. Die thickness is 10mils +/- 1.
5. Pad center coordinates are relative to die center.
6. Die size 1447 x 1346 ( 57 x 53 mils).
Power Dissipation Per Package
8-pin NSOIC (derate 6.14mW
o
C above +70
o
C)...................500mW
8-pin
μ
SOIC (derate 4.85mW
o
C above +70
o
C)....................390mW
The information furnished herein by Sipex has been carefully reviewed
for accuracy and reliability. Its application or use, however, is solely the
responsibility of the user. No responsibility for the use of this information
is assumed by Sipex, and this information shall not explicitly or implicitly
become part of the terms and conditions of any subsequent sales
agreement with Sipex. Specifications are subject to change without
prior notice. By the sale or transfer of this information, Sipex assumes
no responsibility for any infringement of patents or other rights of third
parties which may result from its use. No license or other proprietary
rights are granted by implication or otherwise under any patent or
patent rights of Sipex Corporation.
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