參數(shù)資料
型號(hào): SP6656ER
英文描述: High Efficiency 400mA Synchronous Buck Regulator with Bit Programmable Output
中文描述: 高效率400mA同步降壓穩(wěn)壓器的可編程輸出位
文件頁數(shù): 2/17頁
文件大?。?/td> 185K
代理商: SP6656ER
2
Date: 7/9/04
SP6656 High Efficiency 400mA Synchronous Buck Regulator with Bit Programmable Output Copyright 2004 Sipex Corporation
V
IN
=UV
IN
=V
EN
=3.6V, V
OUT
=V
FB
, I
O
= 0mA, T
AMB
= -40
°
C to +85
°
C, typical values at 27
°
C unless otherwise noted.
PV
,V
.............................................................................................. 6V
All other pins .............................................................. -0.3V to V
+0.3V
PV
, P
, LX current ........................................................................ 2A
Storage Temperature .................................................. -65
°
C to 150
°
C
Operating Temperature ................................................. -40
C to +85
°
C
Lead Temperature (Soldering, 10 sec) ....................................... 300
°
C
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of the device at
these ratings or any other above those indicated in the operation
sections of the specifications below is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may
affect reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
Input Voltage Operating
Range
Minimum Output Voltage
FB Set Voltage, Vr
MIN
2.7
TYP
MAX
5.5
UNITS
V
CONDITIONS
Result of I
Q
measurement at V
IN
=PV
IN
=5.5V
1.0
0.784
V
V
0.800
0.816
25
°
C, I
=200mA Close Loop. L
I
= 10
μ
H,
C
OUT
= 22
μ
F
Measured at V
=5.5V, no load and
V
IN
=3.6V, 200mA load, Close Loop
Overall Accuracy
(-40
°
C to 85
°
C)
(0
°
C to 70
°
C)
On-Time Constant - K
ON
Min, T
ON
=K
ON
/(V
IN
-V
OUT
)
Off-Time Constant - K
OFF
Min, T
OFF
=K
OFF
/V
OUT
Off-Time Blanking
Turn On Time
PMOS Switch Resistance
NMOS Switch Resistance
Inductor Current Limit
Power Efficiency
±
5
±
4
3.0
%
1.5
2.25
V*
μ
s
Close Loop, L
I
= 10
μ
H,C
OUT
= 22
μ
F
1.6
2.4
3.2
V*
μ
s
Inductor current limit tripped, VFB=0.5V
Measured at V
OUT
=1V
100
200
0.3
0.3
625
96
92
500
ns
μ
s
mA
%
400
0.6
0.6
750
400mA Load
I
PMOS
= 200mA
I
NMOS
= 200mA
VFB=0.5V
V
OUT
=2.5V, I
O
=200mA
V
OUT
=3.3V, I
O
=400mA
500
Minimum Guaranteed Load
Current
V
IN
Quiescent Current
V
IN
Shutdown Current
V
OUT
Quiescent Current
V
OUT
Shutdown Current
UVLO
Undervoltage Lockout
Threshold, V
IN
falling
UVLO hysteresis
OVSO Output Voltage
400
mA
20
1
2
1
30
500
5
500
μ
A
nA
μ
A
nA
V
OUT
=3.3V, V
IN
=3.6V and V
IN
= 5.5V
EN=0V
V
OUT
= 3.3V
EN=0V
2.55
2.70
2.85
V
EN=V
IN
,
40
mV
V
0.4
V
IN
=3.3V, I
SINK
=1mA TB Checked. Sink
current to be very low
OVSOLeakage Current
Over-Temperature
Rising Trip Point
Over-Temperature Hysteresis
EN Leakage Current
EN Input Threshold Voltage
1
μ
A
°
C
140
14
1
0.90
1.25
1
3
°
C
nA
V
V
nA
μ
A
500
0.60
High to Low Transition
Low to High Transition
FB=1V
EN=0V, V
=3.6V
LX=0V,LX=V
IN
+0.2V
1.8
100
5
FB Leakage Current
LX Leakage
OVSI Leakage Current
OVSI Input Threshold Voltage
1
500
nA
V
0.60
0.90
1.25
High to Low Transition
Low to High Transition
1.8
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