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| 型號： | SP800MCP |
| 英文描述： | Low Power Microprocessor Supervisory with Battery Switch-Over |
| 中文描述： | 低功耗微處理器監(jiān)控與電池開關(guān)過 |
| 文件頁數(shù)： | 2/24頁 |
| 文件大小： | 196K |
| 代理商： | SP800MCP |
Date: 5/25/04 SP691A/693A/800L/800M Low Power Microprocessor Supervisor with Battery Switch-Over Copyright 2004 Sipex Corporation
2
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability.
Terminal Voltages (with respect to GND)
V
CC
.......................................................................................-0.3V to +6V
V
.....................................................................................-0.3V to +6V
All Other Inputs........................................................-0.3V to (V
CC
+0.3V)
Input Currents
V
CC
Peak...........................................................................................1.0A
V
CC
Continuous.............................................................................250mA
V
BATT
Peak....................................................................................250mA
V
Continuous............................................................................25mA
GND, BATT ON............................................................................100mA
All Other Inputs..............................................................................25mA
V
= +4.75V to +5.5V for the
SP691A/800L
, V
CC
= +4.5V to +5.5V for the
SP693A/800M
, V
BATT
= +2.8V, and T
AMB
= T
MIN
to T
MAX
unless otherwise
noted. Typical values apply at T
AMB
=+25
O
C.
S
R
E
T
E
M
A
R
A
P
.
N
I
M
.
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.
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C
5
0
3
2
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C
C
C
V
V
V
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C
5
1
0
1
0
C
C
5
9
C
C
V
V
V
V
C
C
I
V
I
V
,
V
5
=
5
=
0
=
T
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O
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m
V
m
0
5
5
8
=
2
2
=
=
C
C
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T
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c
n
a
e
R
-
O
6
9
2
0
V
V
C
C
V
V
5
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=
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C
V
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e
d
o
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p
u
k
c
a
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-
B
n
V
V
V
T
3
2
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A
B
T
T
A
B
5
5
T
T
A
B
V
T
1
0
0
T
A
B
V
V
T
T
A
B
7
5
T
T
A
B
V
V
V
V
T
T
A
B
I
V
I
V
I
V
5
=
8
=
0
=
T
U
O
A
A
m
m
A
0
0
m
2
1
5
=
=
=
T
T
A
B
T
U
O
T
T
A
B
T
U
O
V
T
-
T
A
B
V
T
U
O
e
c
n
a
e
R
-
O
5
7
1
0
5
5
0
1
2
3
V
V
V
T
T
A
B
V
V
V
5
=
8
=
0
=
T
T
A
B
T
T
A
B
l
m
r
N
n
I
d
o
e
C
g
y
p
n
p
u
S
O
M
c
c
V
5
3
0
6
μ
A
V
C
C
V
(
>
T
1
T
A
B
I
g
n
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,
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T
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y
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c
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E
T
1
0
0
0
μ
A
V
C
C
V
(
<
T
2
T
A
B
V
,
V
T
T
A
B
I
g
n
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e
,
V
8
=
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U
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T
T
T
A
B
O
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e
C
y
b
d
n
a
S
3
E
T
T
A
B
,
1
2
0
μ
A
V
C
C
> V
(
T
T
A
B
I
g
n
u
x
e
,
V
2
+
T
U
O
d
h
s
e
T
r
v
o
h
c
w
S
y
B
V
V
T
T
A
B
3
3
0
+
0
T
T
A
B
V
p
o
u
w
d
w
o
o
p
p
n
w
s
e
y
H
r
v
o
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c
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S
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B
0
6
V
m
k
a
e
P
o
k
a
e
P
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Enhanced ESD Specifications........................+4kV Human Body Model
Power Dissipation Per Package
16-pin PDIP (derate 14.3mW/
O
C above +70
O
C).......................1150mW
16-pin Narrow SOIC (derate 13.6mW/
O
C above 70
O
C)............1090mW
16-pin Wide SOIC (derate 11.2mW/
O
C above 70
O
C).................900mW
Storage Temperature....................................................-65
O
C to +150
O
C
Lead Temperature (soldering,10 sec).........................................+300
O
C
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