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參數(shù)資料
| 型號： | SP8713 |
| 廠商： | Mitel Networks Corporation |
| 英文描述： | 1100MHz Very Low Current Three Modulus Divider(1100MHz極小電流三模數(shù)除法器) |
| 中文描述： | 至1100MHz非常低的電流三模數(shù)分頻器（至1100MHz極小電流三模數(shù)除法器） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | SP8713 |
2
SP8713
ELECTRICAL CHARACTERISTICS
Guaranteed over the following conditions (unless otherwise stated):
V
CC
=+2.7V to +5.25V (with respect to V
EE
), Output load (pin 4) = 10pF, T
amb
= -40
°
C to +85
°
C (note 2)
Characteristic
Units
Conditions
Supply current
(note 3)
4.1
4.7
mA
Power down input low
Supply current
(note 3)
8
50
μ
A
Power down input high
Power down high
V
CC
-0.5
V
CC
V
Power down low
0
V
CC
-2.0
V
Modulus control 1 high
(note 4)
0.6V
CC
V
CC
V
Divide by 64 or 72
Modulus control 1 low
(note 4)
0
0.4V
CC
V
Divide by 65 or 72
Modulus control 2 high
(note 4)
0.6V
CC
V
CC
V
Divide by 72
Modulus control 2 select low
(note 4)
0
0.4V
CC
V
Divide by 64 or 65
Max. sinewave input frequency
1100
MHz
See Figure 5
Min. sinewave input frequency
200
MHz
See Figure 5
Min. RF input voltage
50
mV RMS RF input 200MHz to
1100MHz. See Figure 5
Max. RF input voltage
200
mV RMS RF input 200MHz to
1100MHz. See Figure 5
Output level (pin 4)
500
600
mV p-p
Modulus set-up time, t
s
(notes 5,6,8)
20
ns
RF input = 1GHz
Modulus hold time, t
h
(notes 6,8)
1
ns
RF input = 1GHz
Power down time, t
pd
(notes 7,8)
10
μ
s
See Figure 9
Power down recovery time, t
pu
(notes 7,8)
6
μ
s
See Figure 9
NOTES
2. All electrical testing is performed at +85
°
C.
3. Typical values are measured at +25
°
C and V
CC
= +5V.
4. Modulus Control and Ratio Select are high impedance inputs which can be driven directly by standard CMOS outputs.
5. Modulus control is latched at the end of the previous cycle.
6. See Figure 4.
7. See Figure 8.
8. These parameters are not tested but are guranteed by design.
Value
Min.
Typ.
Max.
ABSOLUTE MAXIMUM RATINGS
Supply voltage (V
EE
=0V)
Control and RF inputs,
RF output (V
EE
=0V)
RF input current
Operating temperature
Storage temperature range
Maximum junction temperature
NOTE 1. Duration <2 minutes.
(note 1)
-0.5V to 7V
(note 1) -0.5V to V
CC
+0.5V
(note 1)
-40
°
C to +85
°
C
-55
°
C to +150
°
C
10mA
+150
°
C
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| SP8782ADG | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):0.023ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SP8713/IG/MPAS | 制造商:Rochester Electronics LLC 功能描述: 制造商:Zarlink Semiconductor Inc 功能描述: 制造商:ZARLINK 功能描述: |
| SP8713IGMPAC | 制造商:MITEL 制造商全稱:Mitel Networks Corporation 功能描述:1100MHz Very Low Current Three Modulus Divider |
| SP8713IGMPAS | 制造商:MITEL 制造商全稱:Mitel Networks Corporation 功能描述:1100MHz Very Low Current Three Modulus Divider |
| SP8714 | 制造商:MITEL 制造商全稱:Mitel Networks Corporation 功能描述:2100MHz Very Low Current Multi-Modulus Divider |
| SP8714/IG/MPAC | 制造商:Microsemi Corporation 功能描述:PROGRAMMABLE DIVIDER 8SOIC - Tape and Reel |
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