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    參數(shù)資料
    型號: SPC5604PGF0MLL6
    廠商: Freescale Semiconductor
    文件頁數(shù): 77/104頁
    文件大小: 0K
    描述: IC MCU 32BIT 512KB FLASH 100LQFP
    標(biāo)準(zhǔn)包裝: 90
    系列: MPC56xx Qorivva
    核心處理器: e200z0h
    芯體尺寸: 32-位
    速度: 64MHz
    連通性: CAN,F(xiàn)lexRay,LIN,SPI,UART/USART
    外圍設(shè)備: DMA,POR,PWM,WDT
    輸入/輸出數(shù): 68
    程序存儲(chǔ)器容量: 512KB(512K x 8)
    程序存儲(chǔ)器類型: 閃存
    EEPROM 大小: 64K x 8
    RAM 容量: 40K x 8
    電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
    數(shù)據(jù)轉(zhuǎn)換器: A/D 30x10b
    振蕩器型: 內(nèi)部
    工作溫度: -40°C ~ 125°C
    封裝/外殼: 100-LQFP
    包裝: 托盤
    MPC5604P Microcontroller Data Sheet, Rev. 8
    Freescale
    74
    3.15
    Flash memory electrical characteristics
    Table 32. Program and erase specifications
    Symbol
    C
    Parameter
    Value
    Unit
    Min
    Typical1
    1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
    change pending device characterization.
    Initial
    max2
    2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
    Max3
    3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
    values are characterized but not guaranteed.
    Tdwprogram
    P Double Word (64 bits) Program Time4
    4 Actual hardware programming times. This does not include software overhead.
    22
    50
    500
    s
    TBKPRG
    P Bank Program (512 KB)4, 5
    5 Typical Bank programming time assumes that all cells are programmed in a single pulse. In reality some cells will
    require more than one pulse, adding a small overhead to total bank programming time (see Initial Max column).
    1.45
    1.65
    33
    s
    P Bank Program (64 KB)4, 5
    0.18
    0.21
    4.10
    s
    T16kpperase
    P 16 KB Block Pre-program and Erase Time
    300
    500
    5000
    ms
    T32kpperase
    P 32 KB Block Pre-program and Erase Time
    400
    600
    5000
    ms
    T128kpperase
    P 128 KB Block Pre-program and Erase Time
    800
    1300
    7500
    ms
    Table 33. Flash memory module life
    Symbol
    C
    Parameter
    Conditions
    Value
    Unit
    Min
    Typ
    P/E
    C Number of program/erase cycles per block
    for 16 KB blocks over the operating
    temperature range (TJ)
    100,000
    cycles
    P/E
    C Number of program/erase cycles per block
    for 32 KB blocks over the operating
    temperature range (TJ)
    10,000
    100,000 cycles
    P/E
    C Number of program/erase cycles per block
    for 128 KB blocks over the operating
    temperature range (TJ)
    1,000
    100,000 cycles
    Retention C Minimum data retention at 85 °C average
    ambient temperature1
    1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
    temperature range.
    Blocks with 0–1,000 P/E
    cycles
    20
    years
    Blocks with 10,000 P/E
    cycles
    10
    years
    Blocks with 100,000 P/E
    cycles
    5
    years
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