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參數資料
| 型號： | SPD03N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | JFETs |
| 英文描述： | Cool MOS Power-Transistor(Cool MOS 功率晶體管) |
| 中文描述： | 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-252, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 106K |
| 代理商： | SPD03N60S5 |
Semiconductor Group
02 / 1999
1
SPU03N60S5
SPD03N60S5
Preliminary data
Cool MOS
Power Transistor
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche proved
Extreme dvdt rated
Optimized capacitances
Improved noise immunity
Former development designation:
SPUx4N60S5/SPDx4N60S5
G,1
D,2
S,3
C
O L
MOS
Type
SPU03N60S5
SPD03N60S5
V
DS
600 V
I
D
3.2 A
R
DS(on)
1.4
Package
P-TO251-3-1
P-TO252
Marking
03N60S5
03N60S5
Ordering Code
Q67040-S4227
Q67040-S4187
Maximum Ratings ,
at T
j
= 25 ° C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current, tp = 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 3.2 A,
V
DD
= 50 V,
R
GS
= 25
Periodic avalanche energy
E
AR
only limited by
T
jmax
Reverse diode dvdt
I
S
= 3.2 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
Value
3.2
2
Unit
A
I
D
I
D puls
5.7
E
AS
100
mJ
dvdt
6
kV/μs
V
GS
P
tot
±
20
38
V
W
T
j
,
T
stg
-55 ...+150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SPD03N60S5 | 制造商:Infineon Technologies AG 功能描述:MOSFET N D-PAK |
| SPD03N60S5BTMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 3.2A TO-252 |
| SPD03N60S5XT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Infineon Technologies AG 功能描述: |
| SPD040/120-10-F-1/15A | 制造商:TIME MARK CORP SIGNALINE 功能描述:RELAY, SURGE PROTECTION, CURRENT RATING, 15A, 120V, 40KA, |
| SPD040/120-10-F-1/30A | 制造商:TIME MARK CORP SIGNALINE 功能描述:RELAY; SURGE PROTECTION; CURRENT RATING, 30A; 120V; 40KA; |
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