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參數(shù)資料
| 型號(hào)： | SPD504SMS |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 400 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 40K |
| 代理商： | SPD504SMS |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0105B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SPD5 __ ___ __
L Screening
2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L Package
___ = Axial Leaded
SMS = Surface Mount Square Tab
L
Voltage
02 = 200 V
03 = 300 V
04 = 400 V
05 = 500 V
06 = 600V
SPD502-SPD506
and
SPD502SMS - SPD506SMS
5 AMP
200–600 Volts
40 nsec
HYPER FAST RECTIFIER
Features:
Hyper Fast Recovery: 40 nsec Max.
PIV to 600 Volts
Low Forward Voltage Drop
Void Free Construction
Hermetically Sealed Surface Mount Package
For High Efficiency Applications
Single Chip Construction
TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SPD502
SPD503
SPD504
SPD505
SPD506
VRRM
VRWM
VR
200
300
400
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25C)
Io
5
Amps
Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium between Pulses, TA = 25C)
IFSM
100
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +175
C
Maximum Thermal Resistance
Junction to Lead, L=3/8”
Junction to End Tab
RθJL
RθJE
15
10
C/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and
Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
Axial Leaded
SMS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SPD503SMSS | 5 A, 300 V, SILICON, RECTIFIER DIODE |
| SPD506TXV | 5 A, 600 V, SILICON, RECTIFIER DIODE |
| SPD5614SMTXV | 1 A, 200 V, SILICON, SIGNAL DIODE |
| SPD5616TX | 1 A, 400 V, SILICON, SIGNAL DIODE |
| SPD5618SMSTX | 1 A, 600 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPD505 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:5 AMPS 200 - 600 VOLTS 40 nsec HYPER FAST RECTIFIER |
| SPD505SMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:5AMP 200-600VOLTS 40 nsec HYPER FAST RECTIFIER |
| SPD506 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:5 AMPS 200 - 600 VOLTS 40 nsec HYPER FAST RECTIFIER |
| SPD506SMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:5AMP 200-600VOLTS 40 nsec HYPER FAST RECTIFIER |
| SPD50N03S2-07 | 功能描述:MOSFET TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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