參數(shù)資料
型號(hào): SPI80N04S2-H4
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 269K
代理商: SPI80N04S2-H4
2004-05-24
Page 3
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=80A
60
125
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
5250
1870
6980 pF
2490
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
420
630
V
DD
=20V,
V
GS
=10V,
I
D
=80A,
R
G
=2.2
-
16
24
ns
-
45
68
-
50
75
-
40
60
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=32V,
I
D
=80A
-
25
35
nC
-
50
75
Gate charge total
V
DD
=32V,
I
D
=80A,
V
GS
=0 to 10V
-
135
170
Gate plateau voltage
V
(plateau)
V
DD
= 32 V ,
I
D
=80A
-
5.3
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
80
A
Inv. diode direct current, pulsed
I
SM
V
SD
t
rr
Q
rr
-
-
320
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
GS
=0V,
I
F
=80A
-
0.9
1.3
V
V
R
=20V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
60
75
ns
-
100
125
nC
相關(guān)PDF資料
PDF描述
SPI80N08S2-07R OptiMOS Power-Transistor
SPI80N08S2-07 OptiMOS Power-Transistor
SPP80N08S2-07 OptiMOS Power-Transistor
SPB80N08S2-07 OptiMOS Power-Transistor
SPB80N08S2L-07 OptiMOS Power-Transistor
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