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參數(shù)資料
| 型號(hào)： | SPLBS79 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類(lèi)： | 激光器 |
| 英文描述： | LASER DIODE |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | SPLBS79 |
SPL Bxxx
Semiconductor Group
2 / 2
1997-11-24
Characterictics
(T
A = 25 °C)
Parameter
Symbol
Wave-
length
Typical Values
Unit
BGxx
BSxx
Recommended output
power
1)
P
opt
–
20 ... 30
cw
50 ... 100
qcw
W
Catastrophic optical
damage limit
1), 2)
P
COD
≤ 808nm
≥ 940nm
> 80
> 130
> 110
> 200
W
Threshold current
2)
I
th
–
< 11
< 17
A
Differential quantum
efficiency
2)
η
–
> 0.85
W/A
Total conversion efficiency
1)
η
tot
–
> 35
%
Beam divergence (FWHM)
θ
⊥ × θ||
≤ 808nm
≥ 940nm
45°
× 12°
38°
× 12°
Deg.
Standard pulse
wavelength
2), 3)
λ
pulse
≤ 808nm
≥ 940nm
802
934
804
935
nm
Spectral width (FWHM)
λ
–< 4
nm
Fill factor
F
–50
80
%
Emitter width
(Structure)
w
–
200
(20
× 3)
100
–
m
Pitch
p
–
400
126
m
Bar width
(Emitters per bar)
W
–
10.0
25
10.0
77
mm
Cavity length
L
–
600
m
Bar thickness
H
–
115
± 10
m
1) Depending on mounting technique, i.e. on the resulting thermal resistance.
2) Calculated from measurements on one emitter of an unmounted bar (1
s pulses at 1 kHz repetition
rate).
3) Differing pulse wavelengths are available on request.
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