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參數(shù)資料
| 型號(hào)： | SPN03N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 268K |
| 代理商： | SPN03N60S5 |
2004-03-01
Page 2
SPN03N60C3
Rev. 2.0
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 3.2 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
25
max.
-
Thermal resistance, junction - soldering point
R
thJS
R
thJA
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
-
-
110
-
-
70
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=3.2A
-
700
-
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=135
μΑ
,
V
GS
=
V
DS
V
DS
=600V,
V
GS
=0V,
T
j
=25°C,
T
j
=150°C
2.1
3
3.9
-
-
0.5
-
1
70
μA
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=2A,
T
j
=25°C
T
j
=150°C
-
-
1.26
3.8
1.4
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
10
-
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| SPN03N60S5_05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated |
| SPN03N60S5NT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 T/R |
| SPN03N60S5T | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 T/R |
| SPN03N60S5X | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 |
| SPN03N60S5XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 |
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