參數(shù)資料
型號: SPN3055
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強型MOS管
文件頁數(shù): 1/8頁
文件大小: 216K
代理商: SPN3055
DESCRIPTION
The SPN3055 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, such as
DC/DC converter and Desktop computer power
management.
The package is universally preferred for commercial
industrial surface mount applications
FEATURES
30V/12A,R
DS(ON)
= 60m
@V
GS
=10V
30V/ 6A,R
DS(ON)
= 80m
@V
GS
=4.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252-2L package design
2006/08/16
Ver.3
Page 1
SPN3055
N-Channel Enhancement Mode MOSFET
APPLICATIONS
z
Power Management in Desktop Computer
z
DC/DC Converter
z
LCD Display inverter
PIN CONFIGURATION (TO-252-2L)
PART MARKING
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