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參數(shù)資料
| 型號： | SPN3400 |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 210K |
| 代理商： | SPN3400 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless o
℃
therwise noted)
2006/12/05
Ver.2
Page 3
SPN3400
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=24V,V
GS
=1.0V
I
DSS
V
DS
=24V,V
GS
=0.0V
T
J
=55
℃
I
D(on)
V
DS
≧
4.5V,V
GS
=4.5V
V
GS
= 10V,I
D
=5.4A
V
GS
=4.5V,I
D
=4.6A
R
DS(on)
V
GS
=2.5V,I
D
=3.8A
gfs
V
DS
=4.5V,I
D
=5.4A
V
SD
I
S
=1.7A,V
GS
=0V
30
0.8
1.6
±100
1
V
nA
Zero Gate Voltage Drain Current
10
uA
On-State Drain Current
10
A
0.030
0.034
0.040
12
0.8
0.038
0.042
0.055
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
10
18
Gate-Source Charge
Q
gs
1.6
Gate-Drain Charge
Q
gd
V
DS
=15V
GS
=10V
I
D
≡
6.7A
3.2
nC
Input Capacitance
C
iss
450
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
240
38
V
DS
=15V
GS
=0V
f=1MHz
pF
t
d(on)
7
15
Turn-On Time
t
r
10
20
t
d(off)
20
40
Turn-Off Time
t
f
V
DD
=15R
L
=15
I
D
≡
1.0A,V
GEN
=10
R
G
=6
11
20
ns
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