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參數(shù)資料
| 型號(hào)： | SPN3402S23RG |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 208K |
| 代理商： | SPN3402S23RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
2006/03/20
Ver.2
Page 3
SPN3402
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=24V,V
GS
=0.0V
I
DSS
V
DS
=24V,V
GS
=0.0V
T
J
=55
℃
V
DS
≧
4.5V,V
GS
=10V
I
D(on)
V
DS
≧
4.5V,V
GS
=4.5V
V
GS
= 10V,I
D
=2.8A
V
GS
=4.5V,I
D
=2.3A
R
DS(on)
V
GS
=2.5V,I
D
=1.5A
gfs
V
DS
=4.5V,I
D
=2.8A
V
SD
I
S
=1.25A,V
GS
=0V
30
0.8
1.6
±100
1
V
nA
Zero Gate Voltage Drain Current
10
uA
6
4
On-State Drain Current
A
0.048
0.053
0.080
4.6
0.82
0.058
0.065
0.105
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
4.2
0.6
1.5
350
55
41
2.5
2.5
6
V
DS
=15,V
GS
=4.5V
I
D
≡
2.0A
nC
V
DS
=15,V
GS
=0V
f =1MHz
pF
Turn-On Time
t
d(off)
20
Turn-Off Time
t
f
V
DD
=15,R
L
=10
V
GEN
=10V,R
G
=3
4
ns
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