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參數(shù)資料
| 型號(hào)： | SPP2301 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 186K |
| 代理商： | SPP2301 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
2005/03/08
Ver.2
Page 3
SPP2301
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
V
DS
I
D(on)
V
DS
V
GS
=-4.5V,I
D
=-2.8A
R
DS(on)
V
GS
=-2.5V,I
D
=-2.0A
gfs
V
DS
=-5V,I
D
=-2.8A
V
SD
I
S
=-1.6A,V
GS
=0V
-20
-0.45
-1.5
±100
-1
V
nA
Zero Gate Voltage Drain Current
-10
uA
-5V,V
GS
=-4.5V
-5V,V
GS
=-2.5V
-6
-3
On-State Drain Current
A
0.095
0.150
6.5
-0.8
0.12
0.17
-1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
5.8
0.85
1.7
415
223
87
13
10
25
V
DS
=-6V,V
GS
=-4.5V
I
D
≡
-2.8A
nC
V
DS
=-6V,V
GS
=0V
f=1MHz
pF
Turn-On Time
t
r
36
42
34
60
70
60
t
d(off)
t
f
Turn-Off Time
V
DD
=-6V,R
L
=6
I
D
≡
-1.0A,V
GEN
=-4.5V
R
G
=6
ns
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