參數(shù)資料
型號: SPU03N60S5
廠商: SIEMENS A G
元件分類: JFETs
英文描述: Cool MOS Power-Transistor(Cool MOS 功率晶體管)
中文描述: 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-251, 3 PIN
文件頁數(shù): 7/11頁
文件大?。?/td> 106K
代理商: SPU03N60S5
Semiconductor Group
02 / 1999
7
SPU03N60S5
SPD03N60S5
Preliminary data
Avalanche Energy
E
AS
= f (T
j
)
parameter: I
D
= 3.2 A, V
DD
= 50 V
R
GS
= 25
20
40
60
80
100
120
°C
160
T
j
0
20
40
60
80
mJ
120
E
A
Gate threshold voltage
V
GS(th)
= f(T)
parameter: V
GS
= V
DS
, I
D
= 135 μA
-60
-20
20
60
100
°C
180
T
j
0
1
2
3
4
5
V
7
V
G
typ.
98%
2%
Drain-source break down voltage
V
(BR)DSS
=f (T
j
)
-60
-20
20
60
100
°C
180
T
j
500
520
540
560
580
600
620
640
660
V
700
V
(
Forward characteristics of reverse diode
I
F
= f(V
SD
)
parameter: T , t
p
= 80 μs
1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
-2
10
-1
10
0
10
A
SPU03N60S5
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
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