參數(shù)資料
型號: SPX1004M1-1.2
英文描述: 1.2V / 2.5V Micropower Voltage Reference
中文描述: 為1.2V / 2.5V的微功耗電壓參考
文件頁數(shù): 2/5頁
文件大小: 176K
代理商: SPX1004M1-1.2
2
Date: 5/25/04 SPX1004 1.2V/2.5V Micropower Voltage Reference
Copyright 2004 Sipex Corporation
Electrical characteristics are guaranteed over full junction tepmerature range (0
°
C to 70
°
C). Ambient tepmerature must be
derated based on power dissipation and package thermal characteristics.
SPX1004-1.2V
MIN
TYP
1.231 1.235 1.239
1.225 1.235 1.245
20
SPX1004-2.5V
MIN
TYP
2.480 2.500 2.520
2.470 2.500 2.530
60
PARAMETER
Reverse breakdown
CONDITIONS
I
Z
=100
μ
A, T
J
=25
°
C
0
°
C
T
A
70
°
C
I
min
I
Z
20mA
MAX
MAX
UNITS
V
Ave Temp. Coeff.
ppm/
°
C
μ
A
mV
Min Operating Current
Reverse Breakdown
Votlage Change
with Current
4
10
1
1.5
10
20
0.6
1.5
12
0.5
0.5
6.5
6.5
0.8
20
1
1.5
10
20
0.9
1.5
I
min
I
Z
1mA
over temperature
1mA
I
Z
20mA
over temperature
I
Z
=100
μ
A, f=25Hz
over temperature
I
Z
=100
μ
A, 10Hz
f
10kHz
I
Z
=100
μ
A, T
A
=25
°
C
±
0.1
°
C
0.5
0.5
6.5
6.5
0.2
1
60
20
Reverse Dynamic
Impedance
Wide Band Noise
Long Term Stability
120
60
μ
V
ppm/
kHr
°
C
Operating Temp Range
0
70
0
70
ABSOLUTE MAXIMUM RATINGS
Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Forward Current (I
AK
).....................................................10mA
Reverse Current (I
KA
).....................................................30mA
Lead Temperature (soldering, 10 seconds).................300
°
C
Storage Temperature Range.......................-65
°
C to +150
°
C
Junction Temperature..................................................150
°
C
Continuous Power Dissipation (P
D
)
TO-92.........................................................775mW
SOIC-8.......................................................750mW
SOT-89.....................................................1000mW
V
K
0
15
30
Junction Temperature (C)
45
60
75
90
105
-10
0.5
5000
0
0
0
0.07mV/C
0.003%/C
27ppm/C
TCinmV/C =
TCin %/C =
V
KA
(mV)
T
A
T
A
V
KA
at 25C
V
KA
x 100
(
)
TCinppm/C =
T
A
V
KA
at 25C
V
KA
x 10
6
(
)
ppm
%
mV
Figure 2. V
REF
vs Temperature for 2.5V Version
TYPICAL THERMAL RESISTANCES
PACKAGE
0
JA
0
JA
TYPICAL
DERATING
6.3 mW/
°
C
5.7mW/
°
C
9.1mW/
°
C
TO-92
SOIC-8
SOT-89
160
°
C/W
175
°
C/W
110
°
C/W
80
°
C/W
45
°
C/W
8
°
C/W
ELECTRICAL CHARACTERISTICS
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