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參數(shù)資料
| 型號(hào)： | SRDA70-4 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | SRDA70-4 |
STEERING DIODE TVS ARRAY
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2004
8-26-2004 REV A
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
SRDA70-4
S
R
D
A
70
-4
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VFC
Forward Clamping Voltage: The maximum forward clamping voltage across the device when subjected to a
given current at a pulse time of 20 s.
IR
Maximum Leakage Current: The maximum leakage current at VRWM.
C
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
GRAPHS
Pp
p
Peak
Pu
lse
Po
w
er
(kW)
Figure 1
Peak Pulse Power Vs Pulse Time t = sec
OUTLINE AND SCHEMATIC
Figure 2
Pulse Wave Form
PAD LAYOUT
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.188
0.197
4.77
5.00
B
0.150
0.158
3.81
4.01
C
0.053
0.069
1.35
1.75
D
0.011
0.021
0.28
0.53
F
0.016
0.050
0.41
1.27
G
0.050 BSC
1.27 BSC
J
0.006
0.010
0.15
0.25
K
0.004
0.008
0.10
0.20
L
0.189
0.206
4.80
5.23
P
0.228
0.244
5.79
6.19
OUTLINE
SCHEMATIC
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| SRDA70-4.TE | 制造商:Semtech Corporation 功能描述:ESD Suppressor Diode Arrays ±15KV 8-Pin SOIC T/R 制造商:Semtech Corporation 功能描述:Application Specific Diode Array, So |
| SRDA70-4.TET | 制造商:Semtech Corporation 功能描述:ESD Suppressor Diode Arrays ±15KV 8-Pin SOIC T/R |
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