參數(shù)資料
型號(hào): SRF442
英文描述: N-Channel Enhancement Mode RF Power MOSFET(200W-100V-13.56MHz)(N溝道增強(qiáng)型射頻功率MOS場(chǎng)效應(yīng)管(200W-100V-13.56MHz))
中文描述: N溝道增強(qiáng)模式射頻功率MOSFET(功率200W - 100V的- 13.56)(不適用溝道增強(qiáng)型射頻功率馬鞍山場(chǎng)效應(yīng)管(功率200W - 100V的- 13.56))
文件頁數(shù): 1/2頁
文件大小: 16K
代理商: SRF442
SRF442
SRF443
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 5/98
DEVICE
SRF442
GATE
SOURCE
DRAIN
SRF443
DRAIN
SOURCE
GATE
V
DSS
V
DGO
I
D
V
GS
P
D
T
J
, T
STG
T
L
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
2
6
(
B
1
2
4
(
M
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
TO-247AD Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Drain – Gate Voltage
Continuous Drain Current
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
N–CHANNEL
ENHANCEMENT MODE
200W – 100V – 13.56MHz
300
300
8
±30
167
-55 to 150
300
V
A
V
W
°C
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
RF POWER MOSFET
FEATURES
Low Cost Common Source RF
Package.
Very High Breakdown for Improved
Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved
Reliability.
PIN
NO
1
2
3
Dimensions in Millimeters and (Inches)
NOTE:
The SRF442 and SRF443 comprise a symmetric pair of RF Power
Transistors and meet the same electrical specifications. The
device pin-outs are the mirror image of each other to allow ease of
use as a push-pull pair.
相關(guān)PDF資料
PDF描述
SRF443 N-Channel Enhancement Mode RF Power MOSFET(200W-100V-13.56MHz)(N溝道增強(qiáng)型射頻功率MOS場(chǎng)效應(yīng)管(200W-100V-13.56MHz))
SRF444 N-Channel Enhancement Mode RF Power MOSFET(300W-300V-13.56MHz)(N溝道增強(qiáng)型射頻功率MOS場(chǎng)效應(yīng)管(300W-300V-13.56MHz))
SRF445 N-Channel Enhancement Mode RF Power MOSFET(300W-300V-13.56MHz)(N溝道增強(qiáng)型射頻功率MOS場(chǎng)效應(yīng)管(300W-300V-13.56MHz))
SRF449A N-Channel Enhancement Mode RF Power MOSFET(150W-150V-100MHz)(N溝道增強(qiáng)型射頻功率MOS場(chǎng)效應(yīng)管(150W-150V-100MHz))
SRF449B N-Channel Enhancement Mode RF Power MOSFET(150W-150V-100MHz)(N溝道增強(qiáng)型射頻功率MOS場(chǎng)效應(yīng)管(150W-150V-100MHz))
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