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參數(shù)資料
| 型號： | SRM20V512SLTT7 |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | SRM20V512SLTT7 |
SRM20V512SLMT
7
2
Parameter
Supply voltage
Input voltage
Input/Output voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature and time
6
–3.0V when Pulse width is less or equal 50ns
V
DD
V
I
V
I/O
P
D
T
opr
T
stg
T
sol
–0.5 to 4.6
–0.5
6
to V
DD
+0.3
–0.5
6
to V
DD
+0.3
0.5
–40 to 85
–65 to 150
260
°
C, 10s (at lead)
V
V
V
W
°
C
°
C
—
Symbol
Ratings
Unit
(V
SS
= 0V)
(Ta = –40 to 85
°
C)
Max.
Parameter
Input voltage
Supply voltage
Symbol
V
DD
V
SS
V
IH
V
IL
6
If pulse width is less than 50ns, it is –3.0V
Min.
2.7
0
2.2
–0.3
6
3.0
0
—
—
3.6
0
V
DD
+0.3
0.4
V
V
V
V
Typ.
Unit
6
Typical values are measured at Ta = 25
°
C and V
DD
= 3.0V
(f = 1MHz, Ta = 25
°
C)
Max.
8
8
10
Parameter
Symbol
C
ADD
C
I
C
I/O
Address Capacitance
Input Capacitance
I/O Capacitance
Note This parameter is made by the inspection data of sample, not of all products.
Min.
—
—
—
Typ.
—
—
—
Unit
pF
pF
pF
Conditions
V
ADD
= 0V
V
I
= 0V
V
I/O
= 0V
Parameter
Symbol
Conditions
Unit
Input Leakage
High level output voltage
Low level output voltage
Operating supply current
Average operating current
I
LI
V
OH
V
OL
I
DDS
I
DDO
μ
A
mA
V
(V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta = –40 to 85
°
C)
SRM20V512SLMT
7
I
DDA
V
I
= 0 to V
DD
CS1 = V
IH
or CS2 = V
IL
CS1 = CS2
≥
V
DD
–0.2V
or CS2
≤
0.2V
V
= V
IL
, V
I
I/O
= 0mA, t
cyc
= Min.
V
= V
IL
, V
I
I/O
= 0mA, t
cyc
= 1us
V
I
= V
, V
IH
I
I/O
= 0mA
V
μ
A
mA
Standby supply current
I
DDS1
I
DDA1
mA
mA
–1.0
Min.
Typ.
6
—
Max.
1.0
—
—
—
—
—
—
0.3
20
8
8
1.0
30
35
15
15
Output teakage
I
LO
μ
A
CS1 = V
IH
or CS2 = V
IL
or WE = V
IL
or OE = V
IH
, V
IO
= 0 to V
DD
V
DD
≥
3V, I
OH
= –2.0mA
I
OH
= –100
μ
A
V
DD
≥
3V, I
OL
= –2.0mA
I
OL
= 100
μ
A
–1.0
—
1.0
2.4
—
—
—
—
—
—
—
—
0.4
0.2
V
DD
–0.2
I
ABSOLUTE MAXIMUM RATINGS
I
DC RECOMMENDED OPERATING CONDITIONS
G
Terminal Capa citance
I
ELECTRICAL CHARACTERISTICS
G
DC Electrical Characteristics
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