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參數(shù)資料
| 型號(hào)： | SRM9TX |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 900 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 154K |
| 代理商： | SRM9TX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SRM
__ __
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
└
Voltage
5 = 500V
6 = 600V
7 = 700V
8 = 800V
9 = 900V
10 = 1000V
SRM5
thru
SRM10
20 AMPS
500 - 1000 VOLTS
5
μsec
STANDARD RECOVERY
RECTIFIER
FEATURES:
Replace DO-4 or DO-5
Standard Recovery: 5
μsec maximum
PIV to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Surface Mount Version
Equivalent to 5961-94022
TX, TXV, and Space Level Screening Available
2/
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SRM5
SRM6
SRM7
SRM8
SRM9
SRM10
VRRM
VRWM
VR
500
600
700
800
900
1000
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25
oC)
IO
20
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow
Junction to Reach Equilibrium Between Pulses, TA = 25
oC)
IFSM
375
Amps
Operating and Storage Temperature
TOP & Tstg
-65 to +175
oC
Maximum Thermal Resistance
Junction to Lead, L = 3/8”
RθJL
3
oC/W
NOTES:
1/
For Ordering Information, Price, and Availability – Contact Factory.
2/
PIND Testing not required on Void-Free Devices per MIL-PRF-19500
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
Axial
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0046G
DOC
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