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參數(shù)資料
| 型號(hào)： | SRV05-4ATCT |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | SRV05-4ATCT |
6
2010 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SRV05-4A
PIN Descriptions
the reference voltage plus the V
F drop of the diode.
For negative events, the bottom diode will be biased
when the voltage exceeds the V
F of the diode.
At first
approximation, the clamping voltage due to the charac-
teristics of the protection diodes is given by:
V
C = VCC + VF
(for positive duration pulses)
V
C = -VF
(for negative duration pulses)
However, for fast rise time transient events, the
effects of parasitic inductance must also be consid-
ered as shown in Figure 2. Therefore, the actual
clamping voltage seen by the protected circuit will be:
V
C = VCC + VF + LP diESD/dt (for positive duration pulses)
V
C = -VF - LG diESD/dt
(for negative duration pulses)
ESD current reaches a peak amplitude of 30A in 1ns
for a level 4 ESD contact discharge per IEC 61000-4-2.
Therefore, the voltage overshoot due to 1nH of series
inductance is:
V = L
P diESD/dt = 1X10
-9
(30 / 1X10-9) = 30V
Example:
Consider a V
CC = 5V, a typical VF of 30V (at 30A) for the
steering diode and a series trace inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
V
C = 5V + 30V + (10nH X 30V/nH) = 335V
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
that it is not uncommon for the V
F of discrete diodes to
exceed the damage threshold of the protected IC. This
is due to the relatively small junction area of typical
discrete components. It is also possible that the
power dissipation capability of the discrete diode will
be exceeded, thus destroying the device.
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamp’s integrated TVS diode
Figure 1 - “Rail-
Figure 1 - “Rail-TTTTTo-Rail” Pr
o-Rail” Pr
o-Rail” Proooootttttection T
ection T
ection Topology
opology
(First Approximation)
Figure 2 - The Effects of Parasitic Inductance
When Using Discrete Components to Implement
Rail-
Rail-TTTTTo-Rail Pr
o-Rail Pr
o-Rail Proooootttttection
ection
Figure 3 - Rail-
Figure 3 - Rail-TTTTTo-Rail Pr
o-Rail Pr
o-Rail Proooootttttection Using
ection Using
RailClam
RailClamp T
p T
p T VVVVVS Arra
S Arra
S Arrays
ys
Applications Information (continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SRV05-4L-TP | UNIDIRECTIONAL, SILICON, TVS DIODE |
| SRX6548 | QUARTZ CRYSTAL RESONATOR, 13.248 MHz |
| SRX6549 | QUARTZ CRYSTAL RESONATOR, 12.96 MHz |
| SRX6575 | QUARTZ CRYSTAL RESONATOR, 10.24 MHz |
| SS-3GLPB | SNAP ACTING/LIMIT SWITCH, SPDT, MOMENTARY, 3A, 30VDC, 1mm, THROUGH HOLE-STRAIGHT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SRV05-4ATR | 功能描述:TVS DIODE 5VWM 17.5VC SOT23 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類(lèi)型:轉(zhuǎn)向裝置（軌至軌） 單向通道:- 雙向通道:4 電壓 - 反向關(guān)態(tài)（典型值）:5V（最大） 電壓 - 擊穿（最小值）:6V 電壓 - 箝位（最大值）@ Ipp:17.5V 電流 - 峰值脈沖（10/1000μs）:5A（8/20μs） 功率 - 峰值脈沖:- 電源線(xiàn)路保護(hù):是 應(yīng)用:以太網(wǎng) 不同頻率時(shí)的電容:3.2pF @ 1MHz 工作溫度:-55°C ~ 125°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:SOT-23-6 供應(yīng)商器件封裝:SOT-23-6 標(biāo)準(zhǔn)包裝:1 |
| SRV05-4HTG | 功能描述:TVS二極管陣列 6V 0.1uA 20kV ESD Contact RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類(lèi)型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| SRV05-4L | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:5 Volts ESD Protection Device |
| SRV05-4L_13 | 制造商:MCC 制造商全稱(chēng):Micro Commercial Components 功能描述:5 Volts ESD Protection Device Low clamping voltage |
| SRV05-4LC | 制造商:PROTEC 制造商全稱(chēng):Protek Devices 功能描述:ultra low capacitance steering diode/tvs array |
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