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參數(shù)資料
| 型號(hào)： | SS12-TS01P |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | SMAJ, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 465K |
| 代理商： | SS12-TS01P |
THRU
SS14-TS01
1 Amp Schottky
Rectifier
20 to 40 Volts
Features
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
Reverse Energy Tested
High Current Capability
Extremely Low Thermal Resistance
Maximum Ratings
Operating Temperature: -55
°C to +125°C
Storage Temperature: -55
°C to +150°C
Maximum Thermal Resistance; 35
°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
SS12-TS01
SS12
20V
14V
20V
SS14-TS01
SS14
40V
28V
40V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TJ = 100
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
.38V
IFM = 1.0A;
TJ = 25
°C*
Typical Junction
Capacitance
CJ
110pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 2%
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
0.5mA
20mA
TA = 25
°C
TA = 100
°C
www.mccsemi.com
SS12-TS01
Rectifier
H
J
E
F
G
A
B
D
C
Cathode Band
0.070”
0.090”
0.085”
SUGGESTED SOLDER
PAD LAYOUT
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.078
.116
1.98
2.95
B
.067
.089
1.70
2.25
C
.002
.008
.05
.20
D
---
.02
---
.51
E
.035
.055
.89
1.40
F
.065
.096
1.65
2.45
G
.205
.224
5.21
5.69
H
.160
.180
4.06
4.57
J
.100
.112
2.57
2.84
DO-214AC
(SMAJ) (High Profile)
omponents
20736 Marilla Street Chatsworth
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$% !"#
MCC
Revision: 3
2003/04/30
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| SS12-E3 | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC |
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