參數(shù)資料
型號: SS2H10HE3
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
封裝: LEAD FREE, PLASTIC, SMB, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 270K
代理商: SS2H10HE3
SS2H9 & SS2H10
Document Number 88750
28-Jun-05
Vishay Semiconductors
www.vishay.com
1
DO-214AA (SMB)
N
ew
P
ro
duct
High-Voltage Surface Mount Schottky Rectifier
High Barrier Tecnology for improved high
temperature performance
Major Ratings and Characteristics
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
75 A
VF
0.65 V
IR
10 A
Tj max.
175 °C
Features
Low profile package
Guardring for overvoltage protection
Ideal for automated placement
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per J-
STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified#
Parameter
Symbol
SS2H9
SS2H10
Unit
Device marking code
MS9
MS10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at: TL = 130 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 KHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料
PDF描述
SS2P2HE3/84A 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA
SS2P3HE3/85A 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA
SS2P2-E3/84A 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA
SS2P2-E3/85A 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-220AA
SS2P4-E3/85A 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SS2H10HE3/2CT 功能描述:肖特基二極管與整流器 100 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SS2H10HE3/52T 功能描述:肖特基二極管與整流器 100 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SS2H10HE3/55T 功能描述:肖特基二極管與整流器 100 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SS2H10HE3/5BT 功能描述:肖特基二極管與整流器 100 Volt 2.0 Amp 75 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SS2H10-HE3/5BT 制造商:Vishay Semiconductors 功能描述: