參數(shù)資料
型號: SS2PH10-M3/84A
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-220AA
封裝: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 81K
代理商: SS2PH10-M3/84A
Document Number: 84682
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 30-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Surface Mount Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
SS2PH9, SS2PH10
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters and polarity protection applications.
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets
MSL
level
1,
per
J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
50 A
EAS
11.25 mJ
VF at IF = 1.0 A
0.62 V
IR max.
1.0 μA
TJ max.
175 °C
DO-220AA (SMP)
eSMP
Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS2PH9
SS2PH10
UNIT
Device marking code
29
210
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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