參數(shù)資料
型號(hào): SS5P9-E3/86A
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A
封裝: ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 106K
代理商: SS5P9-E3/86A
New Product
SS5P9 & SS5P10
Vishay General Semiconductor
Document Number: 88984
Revision: 29-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Low forward voltage drop, low power
losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters and polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
90 V, 100 V
IFSM
150 A
VF at IF = 5.0 A
0.649 V
IR
4.5 A
TJ max.
150 °C
K
2
1
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS5P9
SS5P10
UNIT
Device marking code
S59
S510
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
5.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2 A, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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