參數(shù)資料
型號: SS8050LT1
英文描述: General purpose transistors
中文描述: 通用晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 133K
代理商: SS8050LT1
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8050LT1
TRANSISTOR
FEATURES
Power dissipation
P
CM
: 0.3 W
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
NPN
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A
I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 0.1mA
I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=40 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CB
=20V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 5V , I
C
=0
0.1
A
h
FE(1)
V
CE
=1V, I
C
= 100mA
120
350
DC current gain
h
FE(2)
V
CE
=1V, I
C
= 800mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=800 mA, I
B
= 80mA
0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=800 mA, I
B
= 80mA
1.2
V
Transition frequency
f
T
V
CE
=10V, I
C
= 50mA
f=
30MHz
100
MHz
CLASSIFICATION OF h
FE
(1)
DEVICE MARKING:
8050LT1=Y1
Unit : mm
SOT
1. BASE
23
2. EMITTER
3. COLLECTOR
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