參數(shù)資料
型號: SSM6P05U
英文描述: TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 200MA I(D) | TSOP
中文描述: 晶體管| MOSFET的|配對| P通道| 20V的五(巴西)直| 200毫安(丁)|的TSOP
文件頁數(shù): 2/4頁
文件大小: 120K
代理商: SSM6P05U
SSM6P05FU
2000-07-19 2/4
Marking
Equivalent Circuit
(top view)
Electrical Characteristics
(Ta
=
25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
V
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.6
1.1
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
50 mA
(Note2)
100
mS
I
D
=
100 mA, V
GS
=
4 V (Note2)
2.1
3.3
Drain-Source ON resistance
R
DS (ON)
I
D
=
50 mA, V
GS
=
2.5 V (Note2)
3.2
4.0
Input capacitance
C
iss
27
pF
Reverse transfer capacitance
C
rss
7
pF
Output capacitance
C
oss
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
21
pF
Turn-on time
t
on
70
Switching time
Turn-off time
t
off
V
DD
=
3 V, I
D
=
50 mA,
V
GS
=
0~
2.5 V
70
ns
Note2: Pulse test
Switching Time Test Circuit
(Q1, Q2 common)
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
100
μ
A for
this product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires
lower voltage than V
th
. (Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device. V
GS
recommended voltage of
2.5 V or higher to turn on
this product.
(c) V
OUT
V
DD
=
3 V
Duty
<
1%
V
IN
: t
r
, t
f
<
5 ns
(Z
out
=
50
)
Common Source
Ta
=
25
°
C
V
DD
OUT
IN
0
2.5 V
10
μ
s
5
R
L
(b) V
IN
t
on
90%
10%
2.5 V
0 V
90%
10%
t
off
t
r
t
f
V
DS (ON)
V
DD
(a) Test circuit
D H
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
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