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參數(shù)資料
| 型號： | SSR04C60S.5CT |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMD0.5, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 259K |
| 代理商： | SSR04C60S.5CT |
SOLID STATE DEVICES, INC.
World's First Silicon Carbide
Centertap Rectifier
SSR04C60CT Series
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
RS0022A
DATA SHEET #:
Maximum Ratings 3/
SYMBOL
UNITS
VALUE
4 Amp 600 Volts
Schottky Silicon Carbide
Centertap Rectifier
DESIGNER'S DATA SHEET
SSR04C 60 S.5 CT TX
Part Number /Ordering Information 1/
Screening
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Configuration
CT = Centertap
Package 2/
/39 = Low Profile TO-39
S.5 = SMD .5
Voltage
50 = 500V
60 = 600V
FEATURES:
World's First Hermetic SIC Centertap Rectifier
High Voltage, 600V
Very High Operating Temperature, 250
°C
No Recovery Time (tfr or trr)
High Current Operation, 4A
Hermetically Sealed Packaging
TX, TXV, S Level Screening Available
Peak Repetitive Reverse and
Peak Surge Reverse Voltage
2
4
Amps
Io
VRRM
VRSM
Average Rectified Forward Current
Per Leg
(Resistive load, 60Hz, Sine Wave)
Total
4
Amps
IFSM
500
600
Maximum Thermal Resistance
Junction to Ambient
Junction to Case
175
45
o
C/W
R00JC
o
C
-55 TO +250°
TOP & Tstg
Operating and Storage Temperature 4/
Volts
1.3
5
Watts
Pd
Power Dissipation
Non Repetitive Peak Surge Current
Per Leg
(8.3 ms Pulse, Half Sine Wave Superimposed on Io)
SSR04C50
SSR04C60
SMD.5 (S.5)
2
3
TO-39 (/39)
Free Air
Heatsunk
Ta = 25°C
Tc = 25°C
3
2
3
1
2
1
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