參數(shù)資料
型號(hào): SSR3515CTS1S
廠商: SOLID STATE DEVICES INC
元件分類: 整流器
英文描述: 20 A, 150 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, SMD1, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 72K
代理商: SSR3515CTS1S
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0053A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SSR3515 __ __ __
Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package S1 = SMD1
Configuration CT = Common Cathode
SSR3515CTS1
35 Amp
CENTER TAP POWER
SCHOTTKY RECTIFIER
150 Volts
Features:
Low forward voltage drop resulting in extremely
low conduction losses
Extremely low switching losses
Hermetically Sealed Power Package
TX, TXV, and S-Level Screening Available
2/
Enhanced operating temperature range
Maximum Ratings
Symbol
Value
Units
Peak Surge Reverse Voltage
VRSM
150
Volts
Peak Repetitive Reverse Voltage
VRRM
150
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Each leg
Package total
IO
ID2
20
35
Amps
Non-repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Each leg)
@ TC = 25°C
IFSM
200
Amps
Max. Avalanche repetitive reverse current
Max. Avalanche non-repetitive reverse current
@ 1.5 x VRRM
IAR
IAS
0.2
8
A
Non-repetitive Avalanche Energy
@ L= 0.18 mH
EAR
7
mJ
Total Power Dissipation
@ TC = 25C
PD
TBD
W
Operating & Storage Temperature
TOP & TSTG
-55 to+175
°C
Maximum Thermal Resistance,
Junction to Case
Each Leg
Per Package
R0JC
2.5
1.25
C/W
Notes:
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
SMD1 (S1)
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