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參數(shù)資料
| 型號(hào)： | SST177-T1 |
| 英文描述： | TRANSISTOR J-FET SOT-23 |
| 中文描述： | 晶體管的J - FET的SOT - 23封裝 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 86K |
| 代理商： | SST177-T1 |
J/SST174 Series
2
Siliconix
P-37653—Rev. D, 25-Jul-94
Absolute Maximum Ratings
Gate-Drain Voltage
Gate-Source Voltage
Gate Current
Storage Temperature
Operating Junction Temperature
30 V
30 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
–50 mA
–55 to 150 C
–55 to 150 C
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
. . . . . . . . . . . . . . .
350 mW
Notes
a.
Derate 2.8 mW/ C above 25 C
Specifications
a
for J/SST174 and J/SST175
Limits
J/SST174
J/SST175
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
V
GS(off)
I
DSS
I
G
= 1 A , V
DS
= 0 V
V
DS
= –15 V, I
D
= –10 nA
V
DS
= –15 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
45
30
30
V
Gate-Source Cutoff Voltage
Saturation Drain Current
c
5
10
3
6
–20
–135
–7
–70
mA
Gate Reverse Current
I
GSS
0.01
1
1
T
A
= 125 C
5
Gate Operating Current
I
G
V
DG
= –15 V, I
D
= –1 mA
V
DS
= –15 V, V
GS
= 10 V
0.01
nA
Drain Cutoff Current
I
D(off)
–0.01
–1
–1
T
A
= 125 C
–5
Drain-Source On-Resistance
r
DS(on)
V
GS(F)
V
GS
= 0 V, V
DS
= –0.1 V
I
G
= –1 mA , V
DS
= 0 V
85
125
Gate-Source Forward Voltage
–0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= –15 V, I
D
= –1 mA
f = 1 kHz
4.5
mS
Common-Source
Output Conductance
g
os
20
S
Drain-Source On-Resistance
r
ds(on)
C
iss
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= 0 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V, V
GS
= 10 V
f = 1 MHz
85
125
Common-Source Input Capacitance
20
Common-Source
Reverse Transfer Capacitance
C
rss
5
pF
Equivalent Input Noise Voltage
e
n
V
DG
= –10 V, I
D
= –1 mA
f = 1 kHz
20
nV
√
Hz
Switching
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
10
V
GS(L)
= 0 V, V
GS(H)
= 10 V
S it hi
See Switching Circuit
15
ns
Turn-Off Time
GS( )
GS( )
10
20
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
PSCIA
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