參數(shù)資料
型號(hào)： SST211
廠商： LINEAR INTEGRATED SYSTEMS INC
元件分類： 小信號(hào)晶體管
英文描述： HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS
中文描述： 50 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-253AA
封裝： ROHS COMPLIANT, PLASTIC, TO-253, 4 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 26K
代理商： SST211
SST211 /SST213 /SST215
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
c
= +25
o
C unless otherwise noted)
Parameter
Breakdown Voltages
V
DS
V
SD
V
DB
V
SB
V
GS
SST211
+30
+10
+30
+15
-15
+25
-0.3
+25
-30
+25
SST213
+10
+10
+15
+15
-15
+25
-0.3
+25
-15
+25
SST215
+20
+20
+25
+25
-25
+30
-0.3
+30
-25
+30
Operating Junction Temperature Range . . -55 to +125
o
C
T
S
Storage Temperature Range . . . . . . . . . . . -55 to +150
o
C
Unit
V
V
V
V
V
V
V
V
V
V
V
GB
V
GD
I
D
P
T
Power Dissipation (at or below Tc = +25
o
C) . . . . 360mW
Linear Derating Factor3.6mW/
o
Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA
T
j
ELECTRICAL CHARACTERISTICS
(T
c
= +25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
SST211
MIN TYP MAX MIN TYP MAX MIN TYP MAX
SST213
SST215
UNIT
TEST CONDITIONS
STATIC
B
VDS
Drain-Source
Breakdown Voltage
30
35
V
I
D
= 10
μ
A, V
GS
= V
BS
= 0
I
D
= 10nA, V
GS
= V
BS
= -5V
I
S
= 10nA, V
GD
= V
BD
= -5V
I
D
= 10nA, V
GB
= 0 Source
OPEN
10
25
10
25
20
25
B
VSD
Source-Drain Breakdown Voltage
10
10
20
B
VDB
Drain-Body
Breakdown Voltage
15
15
25
B
VSB
Source-Body
Breakdown Voltage
15
15
25
I
S
= 10
μ
A, V
GB
= 0 Drain OPEN
I
D(OFF)
Drain-Source
OFF Current
0.2
10
0.2
10
nA
V
DS
= 10V
V
DS
= 20V
V
GS
= V
BS
= -5V
0.2
10
I
S(OFF)
Source-Drain
OFF Current
0.6
10
0.6
10
V
SD
= 10V
V
SD
= 20V
V
GB
= 25V
V
GB
= 30V
V
DS
= V
GS
, I
D
= 1
μ
A, V
SB
= 0
V
GS
= 5V
V
GS
= 10V
V
GD
= V
BD
= -5V
0.6
10
I
GBS
Gate-Body
Leakage Current
10
10
μ
A
V
DB
= V
SB
= 0
10
V
GS(th)
Gate Threshold Voltage
0.5
1.0
2.0
0.1
2.0
0.1
1.0
2.0
V
r
ds(on)
Drain-Source
1
ON Resistance
50
70
50
70
50
70
ohms
I
D
= 1mA
V
SB
= 0
30
45
30
45
30
45
DYNAMIC
g
fs
Common-Source
1
Foward Transcond.
10
12
10
12
10
12
mS
V
DS
= 10V, I
D
= 20mA
f = 1KHz, V
SB
= 0
C
(gs + gd + gb)
C
(gd + db)
C
(gs + sb)
C
(dg)
Gate Node Capacitance
2.4
3.5
2.4
3.5
2.4
3.5
pF
V
DS
= 10V
V
GS
= V
BS
= -15V
f = 1MHz
Drain Node Capacitance
1.3
1.5
1.3
1.5
1.3
1.5
Source Node Capacitance
3.5
4.0
3.5
4.0
3.5
4.0
Reverse Transfer Capacitance
0.3
0.5
0.3
0.5
0.3
0.5
t
d(ON)
t
r
t
(OFF)
Turn ON Delay Time
0.7
1.0
0.7
1.0
0.7
1.0
ns
V
DD
= 5V, V
G(ON)
= 10V
R
L
= 680, R
G
= 51
Rise Time
0.8
1.0
0.8
1.0
0.8
1.0
Turn OFF Time
10
10
10
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Characteristics: See SD211-215 Series
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