參數(shù)資料
型號(hào)： SST440
廠商： LINEAR INTEGRATED SYSTEMS INC
元件分類： 小信號(hào)晶體管
英文描述： MONOLITHIC DUAL N-CHANNEL JFET
中文描述： 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝： ROHS COMPLIANT, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 25K
代理商： SST440
SST440 /SST441
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
Gate-Source Voltage
Forward Gate Current
Power Dissipation
V
GD
V
GS
I
G
P
D
-25
-25
50
300
500
2.4
4
V
V
mA
mW
mW
mW/
o
C
mW/
o
C
C
o
C
o
C
(per side)
(total)
(per side)
(total)
Power Derating
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
T
J
T
stg
T
L
-55 to 150
-55 to 150
300
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTCS
TYP
1
SST440
SST441
UNIT
TEST CONDITIONS
MIN
MAX
MIN
MAX
STATIC
V
(BR)GSS
Gate-Source Breakdown Voltage
-35
-25
-25
V
I
G
= -1
μ
A, V
DS
= 0V
V
GS(OFF
)
Gate-Source Cut off Voltage
Saturation Drain Current
2
-3.5
-1
-6
-1
-6
V
DS
= 10V, I
D
= 1nA
I
DSS
15
6
30
6
30
mA
V
DS
= 10V, V
GS
= 0V
I
GSS
Gate Reverse Current
-1
-500
-500
pA
V
GS
= -15V, V
DS
= 0V
T
A
= 125
o
C
-0.2
nA
I
G
Gate Operating Current
-1
-500
-500
pA
V
DG
= 10V, I
D
= 5mA
T
A
= 125
o
C
-0.2
nA
V
GS(F)
Gate-Source Forward Voltage
0.7
V
I
G
= 1mA, V
DS
= 0V
DYNAMIC
g
fs
Common-Source Forward Transconductance
6
4.5
9
4.5
9
mS
V
DG
= 10V, I
D
= 5mA
f = 1kHz
g
os
Common-Source Output Conductance
20
200
200
μ
S
g
fs
Common-Source Forward Transconductance
5.5
mS
V
DG
= 10V, I
D
= 5mA
f = 100MHz
g
os
Common-Source Output Conductance
30
μ
S
C
iss
Common-Source Input Capacitance
3.5
pF
V
DG
= 10V, I
D
= 5mA
f = 1MHz
C
rss
Common-Source Reverse Transfer Capacitance
1
e
n
Equivalent Input Noise Voltage
4
nV/ Hz
V
DG
= 10V, I
D
= 5mA
f = 10kHz
MATCHING
| V
GS1
-V
GS2
|
Differential Gate-Source Voltage
7
10
20
mV
V
DG
= 10V, I
D
= 5mA
T = -55 to 25
o
C
T = 25 to 125
o
C
| V
GS1
-V
GS2
|
T
Gate-Source Voltage Differential Change with
Temperature
10
μ
V/
o
C
V
DG
=10V,
I
D
= 5mA
10
I
DSS1
I
DSS2
Saturation Drain Current Ratio
0.98
V
DS
= 10V, V
GS
= 0V
g
fs1
g
fs2
Transconductance Ratio
0.98
V
DG
= 10V, I
D
= 5mA
f= 1 kHz
CMRR
Common Mode Rejection Ratio
90
dB
V
DD
= 5 to 10V, I
D
= 5mA
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300
μ
s, duty cycle
≤
3%.
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