參數(shù)資料
型號(hào): SSW2N80A
英文描述: KIT USB DEVELOPMENT LOW SPEED
中文描述: 晶體管| MOSFET的| N溝道| 800V的五(巴西)直|甲(?。﹟對(duì)263AB
文件頁數(shù): 3/7頁
文件大?。?/td> 649K
代理商: SSW2N80A
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
SSW/I2N80A
10
-1
10
0
10
1
10
-2
10
-1
10
0
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-2
10
-1
10
0
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 50 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0
2
4
6
8
0
5
10
15
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
D
]
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
10
-2
10
-1
10
0
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
200
400
600
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
0
5
10
V
DS
= 640 V
V
DS
= 400 V
V
DS
= 160 V
@ Notes : I
D
= 2.0 A
V
G
Q
G
, Total Gate Charge [nC]
相關(guān)PDF資料
PDF描述
SSW2N90A Dual Direct Rambus™ Clock Generator
SSI32R501R-8F 8-Channel Disk Read/Write Circuit
SSI32R510A-2L 2-Channel Disk Read/Write Circuit
SSI32R510A-2P 2-Channel Disk Read/Write Circuit
SSI32R510A-4CL 4-Channel Disk/Tape Read/Write Circuit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSW2N90A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2A I(D) | TO-263AB
SSW3/2N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOVOLTAIC SOLAR CELL
SSW3/4N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOVOLTAIC SOLAR CELL
SSW3/6N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOVOLTAIC SOLAR CELL
SSW-307 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SPDT RF Reflective Switch