
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
Ο
C
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
Ο
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=800V
V
DS
=640V,T
C
=125
Ο
C
V
GS
=10V,I
D
=0.85A
*
V
DS
=50V,I
D
=0.85A
V
DD
=400V,I
D
=2A,
R
G
=16
See Fig 13
V
DS
=640V,V
GS
=10V,
I
D
=2A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
O
4
O
5
O
4
O
4
O
4
O
5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
T
J
=25
di
F
/dt=100A/
μ
s
Ο
C
,I
S
=1.7A,V
GS
=0V
Ο
C
,I
F
=2A
O
4
O
4
O
1
SSW/I2N80A
800
--
2.0
--
--
--
--
--
1.06
--
--
--
--
--
45
19
15
22
38
18
22
3.8
11.6
--
--
3.5
100
-100
25
250
6.0
--
550
55
25
40
55
85
45
30
--
--
1.56
425
--
--
--
290
0.8
2
8
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=100mH, I
AS
=2A, V
DD
=50V, R
G
=27
, Starting T
J
=25
I
SD
2A, di/dt 90A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
Ο
C
Ο
C
<
O
1
O
O
3
O
2
4